BU941TT1TL
Silicon NPN Power Transistor
DESCRIPTION
·High
Voltage
·DARLINGTON
APPLICATIONS
·High
ruggedness electronic ignitions
·High
voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (T
a
=25
℃
)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
C
T
j
T
stg
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current- Continuous
Collector Current-Peak
Base Current
Base Current-Peak
Collector Power Dissipation
@T
C
=25℃
Junction Temperature
Storage Temperature Range
VALUE
500
400
5
15
30
1
5
150
150
-65~150
UNIT
V
V
V
A
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal Resistance, Junction to Case
MAX
1.2
UNIT
℃/W
Ordering Information
Product
BU941TT1TL
Package
TO-220
Packaging
Tube
V01
1
www.sourcechips.com
BU941TT1TL
ELECTRICAL CHARACTERISTICS
T
C
=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CE
(sat)-1
V
CE
(sat)-2
V
CE
(sat)-3
V
BE
(sat)-1
V
BE
(sat)-2
V
BE
(sat)-3
I
CES
I
CEO
I
EBO
h
FE
V
ECF
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
C-E Diode Forward Voltage
CONDITIONS
I
C
= 50mA; I
B
= 0
I
C
= 8 A; I
B
= 100mA
I
C
= 10 A; I
B
= 250mA
I
C
= 12 A; I
B
= 300mA
I
C
= 8 A; I
B
= 100mA
I
C
= 10 A; I
B
= 250mA
I
C
= 12 A; I
B
= 300mA
V
CE
= 500V;V
BE
= 0
V
CE
= 500V;V
BE
= 0;T
j
=125℃
V
CE
= 450V;I
B
= 0
V
CE
= 450V;I
B
= 0;T
j
= 125℃
V
EB
= 5V; I
C
= 0
I
C
= 5A ; V
CE
= 10V
I
F
= 10A
300
2.5
V
MIN
400
1.6
1.8
2.0
2.2
2.5
2.7
0.1
0.5
0.1
0.5
20
TYP
MAX
UNIT
V
V
V
V
V
V
V
mA
mA
mA
V01
2
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