SPT60N65F1A1T8TL
650V /60A Trench Field Stop IGBT
650V Trench Field Stop IGBTs offer low
switching losses, high energy efficiency and
high
avalanche
ruggedness
for
motion
V
CE
I
C
V
CE(SAT)
I
C
=60A
650
60
1.85
V
A
V
control, solar application and welding machine.
FEATURES
High breakdown voltage up to 650V for
improved reliability
Trench-Stop Technology offering :
High speed switching
High ruggedness, temperature stable
Low V
CEsat
Easy parallel switching capability due
to positive temperature coefficient in
V
CEsat
Enhanced avalanche capability
APPLICATION
Uninterruptible Power Supplies
Inverter
Welding Converters
PFC applications
Converter with high switching frequency
Ordering Information
Product
SPT60N65F1A1T8TL
Package
TO-247
Packaging
Tube
V01
1
www.sourcechips.com
SPT60N65F1A1T8TL
Maximum Ratings
（T
j
= 25℃ unless otherwise specified）
Parameter
Symbol
Value
Unit
Collector-Emitter Breakdown Voltage
DC collector current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Diode Forward current, limited by
T
jmax
T
C
= 25°C
T
C
= 100°C
Continuous Gate-emitter voltage
Transient Gate-emitter voltage
Turn off safe operating area
V
CE
≤650V,
T
j
≤ 150°C
Pulse collector current,
V
GE
=15V,
t
p
limited by T
jmax
Power dissipation , T
j
=25
°C
V
CE
I
C
650
120
60
120
60
±20
±30
180
180
260
-40...+150
-55...+150
260
V
A
I
F
V
GE
V
GE
-
I
CM
P
tot
A
V
V
A
A
W
Operating junction temperature
Storage temperature
Soldering temperature, wave soldering
1.6mm (0.063in.) from case for 10s
T
j
Ts
-
°C
°C
°C
Thermal Resistance
Parameter
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance,
junction - ambient
Symbol
R
θ
(j-c)
R
θ
(j-c)
R
θ
(j-a)
Max. Value
0.48
1.1
40
Unit
K/W
K/W
K/W
V01
2
www.sourcechips.com
SPT60N65F1A1T8TL
Electrical Characteristics
（T
j
= 25℃ unless otherwise specified）
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Static
Collector-Emitter Breakdown
Voltage
V
GE
=0V , I
C
=250uA
BV
CES
V
GE
=0V , I
C
=1mA
V
GE(th)
V
GE
=V
CE
, I
C
=250uA
650
4.0
5.0
6.0
V
V
650
-
V
Gate Threshold Voltage
Collector-Emitter Saturation
Voltage
V
CE(sat)
V
GE
=15V, I
C
=60A
T
j
= 25°C
T
j
= 150°C
-
-
1.85
2.25
2.2
V
V
Zero gate voltage collector current
I
CES
V
CE
= 650V,
V
GE
= 0V
T
j
= 25°C
T
j
= 150°C
V
CE
= 0V,
V
GE
=±20V
V
CE
= 20V,
I
C
= 60A
-
0.1
40
1000
100
μA
Gate-emitter leakage current
Transconductance
I
GES
gfs
nA
S
52
-
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
ies
C
oes
C
res
Q
G
V
CC
= 520V, I
C
= 60A,
V
GE
= 15V
-
V
CE
= 30V,
V
GE
= 0V,
f = 1MHz
3800
130
70
158
-
nC
pF
V01
3
www.sourcechips.com
SPT60N65F1A1T8TL
Switching Characteristic, Inductive Load
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Dynamic
T
j
=25C
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Energy
Turn-off Energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
V
CC
= 400V,
I
C
= 60.0A,
V
GE
= 0.0/15.0V,
Rg=12Ω
-
-
-
-
-
-
56
79
165
81
2.2
0.89
-
-
-
-
-
-
ns
ns
ns
ns
mJ
mJ
Electrical Characteristics of the DIODE
（T
j
= 25℃ unless otherwise specified）
Parameter
Dynamic
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Current
Reverse Recovery Charge
V
FM
T
rr
I
rr
Q
rr
I
F
= 40A,
V
R
= 300V,
di/dt= 600A/μs,
I
F
= 60A
-
-
-
-
2.9
90
17
900
-
-
-
-
V
Symbol
Conditions
Min
Typ
Max
Unit
ns
A
nC
V01
4
www.sourcechips.com
SPT60N65F1A1T8TL
Fig. 1 FBSOA characteristics
300
Fig. 2 Power dissipation as a function of T
C
100
250
t
P
= 10μs
50μs
100μs
200
I
C
(A)
1ms
DC
1
50
T
a
=25°C, T
j
≤150C
, V
GE
=15V
P
tot
(W)
10
500μs
150
100
0.1
1
10
100
1000
0
25
50
75
100
125
150
VCE(V)
Fig. 3 Output characteristics
200
190
180
170
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0
200
V
GE
= 20V
17V
15V
13V
11V
9V
7V
T
C
(℃)
Fig. 4 Saturation voltage characteristics
180
160
140
120
150℃
25℃
I
C
(A)
I
C
(A)
100
80
60
40
20
V
GE
= 15V
0
1
2
3
4
5
0
1
2
3
4
5
6
V
CE
(V)
V
CE
(V
)
V01
5
www.sourcechips.com
京公网安备 11010802033920号
EEWORLD
