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BAT60JFILM

Description
DC reverse withstand voltage (Vr): 10V Average rectified current (Io): 3A Forward voltage drop (Vf): 580mV @ 1A Small signal switching diode 10V, 3A
CategoryDiscrete semiconductor    diode   
File Size232KB,5 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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DC reverse withstand voltage (Vr): 10V Average rectified current (Io): 3A Forward voltage drop (Vf): 580mV @ 1A Small signal switching diode 10V, 3A

BAT60JFILM Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
package instructionR-PDSO-G2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time15 weeks
Samacsys DescriptionSMALL SIGNAL SCHOTTKY DIODE
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.32 V
JESD-30 codeR-PDSO-G2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current5 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.31 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage10 V
surface mountYES
technologySCHOTTKY
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
®
BAT60J
SMALL SIGNAL SCHOTTKY DIODE
FEATURES AND BENEFITS
s
s
s
s
s
VERY SMALL CONDUCTION LOSSES
NEGLIGIBLE SWITCHING LOSSES
LOW FORWARD VOLTAGE DROP
EXTREMELY FAST SWITCHING
SURFACE MOUNTED DEVICE
A
60
K
DESCRIPTION
Schottky barrier diode encapsulated in a SOD-323
small SMD package.
This device is intended for use in portable
equipments. It is suited for DC to DC converters,
step-up conversion and power management.
SOD-323
ABSOLUTE RATINGS
(limiting values)
Symbol
V
RRM
I
F
I
FSM
P
tot
T
stg
Tj
TL
* :
Parameter
Repetitive peak reverse voltage
Peak forward current
Surge non repetitive forward current
Power Dissipation
Storage temperature range
Maximum operating junction temperature *
Maximum temperature for soldering during 10s
δ
= 0.11
tp=10ms
Ta=25°C
Value
10
3
5
310
- 65 to +150
150
260
Unit
V
A
A
mW
°C
°C
°C
dPtot
1
thermal runaway condition for a diode on its own heatsink
<
dTj
Rth
(
j
a
)
THERMAL RESISTANCE
Symbol
R
th (j-a)
Junction to ambient (*)
Parameter
Value
400
Unit
°C/W
(*) Mounted on epoxy board with recommended pad layout.
January 2003 - Ed: 6A
1/5

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