BUL39D datasheet, PDF - EEWORLD Datasheet

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BUL39D: DescriptionRated power: 70W Collector current Ic: 4A Collector-emitter breakdown voltage Vce: 450V Transistor type: NPN High voltage fast switching NPN type transistor, Vceo=450V, Ic=4A; CategoryDiscrete semiconductor The transistor; File Size186KB，6 Pages; ManufacturerSTMicroelectronics; Websitehttp://www.st.com/

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BUL39D Overview

Rated power: 70W Collector current Ic: 4A Collector-emitter breakdown voltage Vce: 450V Transistor type: NPN High voltage fast switching NPN type transistor, Vceo=450V, Ic=4A

BUL39D Parametric

Parameter Name	Attribute value
Brand Name	STMicroelectronics
Maker	STMicroelectronics
Parts packaging code	TO-220AB
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Samacsys Description	BUL39D, NPN Bipolar Transistor, 4 A 450 V HFE:4 Power, 3-Pin TO-220
Maximum collector current (IC)	4 A
Collector-emitter maximum voltage	450 V
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE)	4
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
JESD-609 code	e3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power consumption environment	70 W
Maximum power dissipation(Abs)	70 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	1600 ns
VCEsat-Max	1.1 V

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BUL39D

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

NPN TRANSISTOR

HIGH VOLTAGE CAPABILITY

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

VERY HIGH SWITCHING SPEED

HIGH RUGGEDNESS

APPLICATIONS

ELECTRONIC TRANSFORMERS FOR

HALOGEN LAMPS

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The BUL39D is manufactured using high voltage

Multi Epitaxial Planar technology to enhance

switching speeds while maintaining wide RBSOA.

The BUL series is designed for use in electronics

transformers for halogen lamps.

TO-220

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

CES

CEO

EBO

tot

stg

Parameter

Collector-Emitter Voltage (V

= 0)

Collector-Emitter Voltage (IB = 0)

Emitter-Base Voltage (IC = 0)

Collector Current

Collector Peak Current (t

<5 ms)

Base Current

Base Peak Current (t

<5 ms)

Total Dissipation at Tc = 25 C

Storage Temperature

Max. Operating Junction Temperature

Value

850

450

-65 to 150

150

Unit

June 1998

1/6

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