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D45H11

Description
Rated power: 50W Collector current Ic: 10A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP
CategoryDiscrete semiconductor    The transistor   
File Size164KB,8 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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D45H11 Overview

Rated power: 50W Collector current Ic: 10A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP

D45H11 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeTO-220AB
package instructionROHS COMPLIANT, TO-220, 3 PIN
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time8 weeks
Samacsys DescriptionD45H11, PNP Bipolar Transistor, 20 A 80 V HFE:40 Power, 3-Pin TO-220
Shell connectionCOLLECTOR
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typePNP
Maximum power consumption environment50 W
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)40 MHz
VCEsat-Max1 V
Base Number Matches1
D44H8 - D44H11
D45H8 - D45H11
Complementary power transistors
Features
.
Low collector-emitter saturation voltage
Fast switching speed
TAB
Applications
Power amplifier
Switching circuits
TO-220
1
2
3
Description
The devices are manufactured in low voltage multi
epitaxial planar technology. They are intended for
general purpose linear and switching applications.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
D44H8
D44H11
D45H8
D45H11
Polarity
NPN
NPN
PNP
PNP
Package
TO-220
TO-220
TO-220
TO-220
Packaging
Tube
Tube
Tube
Tube
Order codes
D44H8
D44H11
D45H8
D45H11
October 2009
Doc ID 4213 Rev 5
1/8
www.st.com
8

D45H11 Related Products

D45H11 D44H11 D44H8
Description Rated power: 50W Collector current Ic: 10A Collector-emitter breakdown voltage Vce: 80V Transistor type: PNP Rated power: 50W Collector current Ic: 10A Collector-emitter breakdown voltage Vce: 80V Transistor type: NPN NPN, Vceo=80V, Ic=10A Rated power: 50W Collector current Ic: 10A Collector-emitter breakdown voltage Vce: 60V Transistor type: NPN NPN
Brand Name STMicroelectronics STMicroelectronics STMicroelectronics
Maker STMicroelectronics STMicroelectronics STMicroelectronics
Parts packaging code TO-220AB TO-220AB TO-220AB
package instruction ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN ROHS COMPLIANT, TO-220, 3 PIN
Contacts 3 3 3
Reach Compliance Code not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99
Factory Lead Time 8 weeks 8 weeks 8 weeks
Samacsys Description D45H11, PNP Bipolar Transistor, 20 A 80 V HFE:40 Power, 3-Pin TO-220 D44H11, NPN Bipolar Transistor, 20 A 80 V HFE:40 Power, 3-Pin TO-220 D44H8, NPN Bipolar Transistor, 20 A 60 V HFE:40 Power, 3-Pin TO-220
Shell connection COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 10 A 10 A 10 A
Collector-emitter maximum voltage 80 V 80 V 60 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 40 40 40
JEDEC-95 code TO-220AB TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3
Number of components 1 1 1
Number of terminals 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED
Polarity/channel type PNP NPN NPN
Maximum power consumption environment 50 W 50 W 50 W
Maximum power dissipation(Abs) 50 W 50 W 50 W
Certification status Not Qualified Not Qualified Not Qualified
surface mount NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT APPLICABLE NOT APPLICABLE NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 40 MHz 50 MHz 50 MHz
VCEsat-Max 1 V 1 V 1 V
Base Number Matches 1 1 1
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