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BD135

Description
Rated power: 1.25W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN
CategoryDiscrete semiconductor    The transistor   
File Size141KB,9 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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BD135 Overview

Rated power: 1.25W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN

BD135 Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSIP
package instructionPLASTIC PACKAGE-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time8 weeks
Samacsys DescriptionBD135, NPN Bipolar Transistor, 3 A 45 V HFE:25 Power, 3-Pin SOT-32
Shell connectionISOLATED
Maximum collector current (IC)1.5 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power consumption environment12.5 W
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz
VCEsat-Max0.5 V
BD135 - BD136
BD139 - BD140
Complementary low voltage transistor
Features
Products are pre-selected in DC current gain
Application
General purpose
3
2
1
Description
These epitaxial planar transistors are mounted in
the SOT-32 plastic package. They are designed
for audio amplifiers and drivers utilizing
complementary or quasi-complementary circuits.
The NPN types are the BD135 and BD139, and
the complementary PNP types are the BD136
and BD140.
SOT-32
Figure 1.
Internal schematic diagram
NPN
PNP
Table 1.
Device summary
Marking
BD135
BD135-16
BD136
BD136-16
BD139
SOT-32
BD139-10
BD139-16
BD140
BD140-10
BD140-16
BD139-10
BD139-16
BD140
BD140-10
BD140-16
Rev 5
1/9
www.st.com
9
Order codes
BD135
BD135-16
BD136
BD136-16
BD139
Package
Packaging
Tube
May 2008

BD135 Related Products

BD135 BD136
Description Rated power: 1.25W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 45V Transistor type: NPN Rated power: 1.25W Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 45V Transistor type: PNP
Brand Name STMicroelectronics STMicroelectronics
Reach Compliance Code not_compliant not_compliant
ECCN code EAR99 EAR99
Factory Lead Time 8 weeks 8 weeks
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 1.5 A 1.5 A
Collector-emitter maximum voltage 45 V 45 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 25 25
JEDEC-95 code TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN PNP
Maximum power consumption environment 12.5 W 12.5 W
Maximum power dissipation(Abs) 8 W 8 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 75 MHz
VCEsat-Max 0.5 V 0.5 V

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