BAT30
Small signal Schottky diodes
Datasheet
-
production data
Description
The BAT30 series uses 30 V Schottky barrier
diodes encapsulated in SOD-523 or SOT-323
packages.
This device is specially suited for switching mode
applications needing low forward voltage drop
diodes.
Features
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery times
Extremely fast switching
Surface mount device
Low capacitance diode
ECOPACK 2 and RoHS compliant component
®
Table 1. Device summary
Symbol
I
F
V
RRM
C (typ.)
T
j
(max.)
Value
300 mA
30 V
14 pF
150 °C
April 2015
This is information on a product in full production.
DocID12564 Rev 5
1/12
www.st.com
Characteristics
BAT30
1
Characteristics
Table 2. Absolute ratings (limiting values at T
amb
= 25 °C, unless otherwise specified)
Symbol
V
RRM
I
F
I
FSM
I
FRM
P
D(1)
T
stg
T
j
T
L
Parameter
Repetitive peak reverse voltage
Continuous forward current
Surge non repetitive forward current
Repetitive peak forward current,
square wave
Power dissipation
Storage temperature range
Maximum operating junction temperature
Maximum soldering temperature
t
p
= 10 ms Sinusoidal
T
A
= 85 °C,
δ
= 0.1
SOT-323
SOD-523
Value
30
300
1
0.9
225
200
-65 to +150
150
260
Unit
V
mA
A
A
mW
°C
°C
°C
1. On epoxy printed circuit board with recommended pad layout
Table 3. Thermal parameters
Symbol
R
th(j-a)
Parameter
Junction to ambient
(1)
SOT-323
SOD-523
Value
550
600
Unit
°C/W
1. On epoxy printed circuit board with recommended pad layout
2/12
DocID12564 Rev 5
BAT30
Table 4. Static electrical characteristics
Symbol
Parameter
Test conditions
V
R
= 5 V
T
j
= 25 °C
I
R(1)
Reverse leakage current
T
j
= 70 °C
T
j
= 85 °C
V
R
= 10 V
V
R
= 25 V
V
R
= 30 V
V
R
= 10 V
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
V
F(2)
Forward voltage drop
T
j
= 25° C I
F
= 30 mA
I
F
= 100 mA
I
F
= 200 mA
I
F
= 300 mA
1. Pulse test: t
p
= 5 ms,
< 2 %
2. Pulse test: t
p
= 380 µs,
< 2 %
Characteristics
Min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
Max.
0.5
1
Unit
0.65
3
5
µA
7
18
20
50
240
300
375
430
500
580
mV
530
Table 5. Dynamic characteristics
Symbol
Parameter
Test conditions
V
R
= 0 V, F = 1 MHz
C
Diode capacitance
V
R
= 1 V, F = 1 MHz
V
R
= 10 V, F = 1 MHz
Min.
-
-
-
Typ.
22
14
6
Max.
-
-
-
pF
Unit
DocID12564 Rev 5
3/12
12
Characteristics
BAT30
Figure 1. Power dissipation versus average
forward current
P (W)
0.175
0.150
0.125
0.100
0.075
0.050
0.025
0.000
0.00
δ=0.05
δ=0.1
δ=0.2
δ=0.5
δ=1
Figure 2. Continuous forward current versus
ambiant temperature
T
I
F(AV)
(A)
δ
=tp/T
0.25
0.30
tp
0.05
0.10
0.15
0.20
0.35
Figure 3. Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 4. Relative variation of thermal
impedance junction to ambient versus pulse
duration
Figure 5. Leakage current versus reverse
applied voltage (typical values)
Figure 6. Relative variation of reverse leakage
current versus junction temperature (typical
values)
4/12
DocID12564 Rev 5
BAT30
Characteristics
Figure 7. Junction capacitance versus reverse
applied voltage (typical values)
Figure 8. Forward voltage drop versus forward
current (typical values)
Figure 9. Forward voltage drop versus forward
current (typical values)
DocID12564 Rev 5
5/12
12
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