BUX87
High voltage NPN power transistor
Features
■
■
■
High voltage capability (450 V V
CEO
)
Minimum lot-to-lot spread for reliable operation
High DC current gain
Applications
■
Flyback and forward single transistor low
power converters
SOT-32
3
2
1
Description
The BUX87 is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and high voltage withstand
capability.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking
BUX87
Package
SOT-32
Packaging
Tube
Order code
BUX87
April 2009
Doc ID 4508 Rev 5
1/9
www.st.com
9
Electrical ratings
BUX87
1
Electrical ratings
Table 2.
Symbol
V
CES
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
TOT
T
stg
T
J
Absolute maximum ratings
Parameter
Collector-emitter voltage (V
BE
= 0)
Collector-emitter voltage (I
B
= 0)
Emitter-base voltage (I
C
= 0)
Collector current
Collector peak current (t
p
≤
5ms)
Base current
Base peak current (t
p
≤
5ms)
Total power dissipation at T
c
= 25 °C
Storage temperature
Max. operating junction temperature
Value
1000
450
5
0.5
1
0.3
0.6
40
-65 to 150
°C
150
Unit
V
V
V
A
A
A
A
W
Table 3.
Symbol
Thermal data
Parameter
Value
3.1
Unit
°C/W
R
thj-case
Thermal resistance junction-case max.
2/9
Doc ID 4508 Rev 5
BUX87
Electrical characteristics
2
Electrical characteristics
T
case
= 25 °C; unless otherwise specified.
Table 4.
Symbol
I
CES
I
EBO
V
CEO(sus)(1)
V
EBO
V
CE(sat)(1)
V
BE(sat)(1)
h
FE(1)
f
T
Electrical characteristics
Parameter
Collector cut-off current
(V
BE
= 0)
Emitter cut-off current
(I
C
= 0)
Test conditions
V
CE
= 1000 V
V
CE
= 1000 V
V
EB
= 5 V
450
5
I
B
= 10 mA
I
B
= 20 mA
I
B
= 20 mA
V
CE
= 5 V
V
CE
= 5 V
V
CE
= 10 V
50
12
20
MHz
0.8
1
1
Min.
Typ.
Max.
100
1
1
Unit
µA
mA
mA
V
V
V
V
V
T
C
= 125 °C
Collector-emitter
I = 10 mA
sustaining voltage (I
B
= 0)
C
Emitter-base voltage
(I
C
= 0)
Collector-emitter
saturation voltage
Base-emitter saturation
voltage
DC current gain
Transition frequency
Resistive load
Storage time
Fall time
I
E
= 10 mA
I
C
= 0.1 A
I
C
= 0.2 A
I
C
= 0.2 A
I
C
= 50 mA
I
C
= 40 mA
I
C
= 50 mA
f = 1MHz
t
s
t
f
V
CC
= 250 V I
C
= 200 mA
I
B(on)
= 40 mA I
B(off)
= -80 mA
t
P
= 20 µs
4.5
0.5
µs
µs
1. Pulsed duration = 300 µs, duty cycle
≤
1.5%
Doc ID 4508 Rev 5
3/9
Electrical characteristics
BUX87
2.1
Figure 2.
Electrical characteristics (curves)
Safe operating area
Figure 3.
Derating curve
Figure 4.
DC current gain
Figure 5.
DC current gain
Figure 6.
Collector-emitter saturation voltage Figure 7.
Base-emitter saturation voltage
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Doc ID 4508 Rev 5
BUX87
Figure 8.
Reverse biased SOA
Electrical characteristics
Doc ID 4508 Rev 5
5/9