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C2012C0G1H122JT000N

Description
Accuracy: ±5% Capacitance: 1.2nF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G
CategoryPassive components    The patch capacitance   
File Size2MB,57 Pages
ManufacturerTDK Corporation
Websitehttp://www.tdk.com
Download Datasheet Parametric View All

C2012C0G1H122JT000N Overview

Accuracy: ±5% Capacitance: 1.2nF Rated voltage: 50V Temperature drift coefficient (dielectric material): C0G Material: C0G

C2012C0G1H122JT000N Parametric

Parameter NameAttribute value
Accuracy±5%
Capacitance1.2nF
Rated voltage50V
Temperature drift coefficient (dielectric material)C0G
MULTILAYER CERAMIC CHIP CAPACITORS
October 2018
积层贴片陶瓷片式电容器
一般等级, 一般 (Up
to 75V)
C
系列
C0402
C0603
C1005
C1608
C2012
C3216
C3225
C4532
C5750
[01005 inch]
[0201 inch]
[0402 inch]
[0603 inch]
[0805 inch]
[1206 inch]
[1210 inch]
[1812 inch]
[2220 inch]
*
表示尺寸代码。
JIS[EIA]
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