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BR4407

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 14mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 3W Type: P channel P channel, -30V, -12A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size1MB,7 Pages
ManufacturerJiangsu All Power Microelectronics Co.,Ltd.
Websitehttp://www.all-power.net
深圳铨力半导体有限公司成立于2016年,是一家致力于功率半导体电子元器件研发与销售的高新技术型企业。公司研发团队主要来自中国台湾、美国硅谷及內地顶尖技术精英,公司总部坐落于中国深圳,在韩国和广州设有分公司。 铨力依靠专业的自主研发能力和先进的制造能力,为行业提供了超400KK/年的性能卓越的半导体产品,现有产品包括中低压MOSFET、AC-DC电源管理芯片等,铨力已经成为电脑、网通、消费性产品、手机、电池等行业长期合作伙伴,产品远销国内外。 我们始终坚持主动了解客户需求,通过不断研发创新,竭诚为客户提供绿色、节能、高效的功率半导体产品和解决方案,为客户的成功提供强力支撑。
Download Datasheet Parametric View All

BR4407 Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 14mΩ @ 10A, 10V Maximum power dissipation (Ta= 25°C): 3W Type: P channel P channel, -30V, -12A

BR4407 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C12A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance14mΩ @ 10A,10V
Maximum power dissipation (Ta=25°C)3W
typeP channel

BR4407 Preview

Download Datasheet
BR4407
AIIP
DATA SHEET
P-Channel p。,werMOSFET
描述l Descripti ns
SOP-8
塑封封装
P
沟道
MOS场效应营。
P-Channel Enhancement Mode Field Effect Transist,。r in a SOP-8 Plastic Package.
。iW
ER
特征l Features
Vos (V)
=
-30V
lo
=
-12 A (VGs
=
-20V)
Ros(ON) < 13m0 (VGs
=
-20V)
Ros(ON) < 14m0 (VGs
=
-10V)
用途l Applications
用于电源管理,便携式设备和电池供电系统.
p wer Management in N teb k computer, Portable Equipment and Batter
内部等放电画
l Equivalent Circuit
。 。。
1
PIN1 : S
PIN 5 : D
PIN 2 : S
PIN 6 : D
PIN 3 : S
PIN 7 : D
PIN 4 : G
PIN 8 : D
印章代码I Marking
见印章说明 See Marking Instructions.
All Power Semiconductor co.,Ltd
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