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AP8205

Description
Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 24mΩ @ 6A, 4.5V Maximum power dissipation ( Ta=25°C): 1.14W Type: Dual N-channel (common drain)
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,5 Pages
ManufacturerJiangsu All Power Microelectronics Co.,Ltd.
Websitehttp://www.all-power.net
深圳铨力半导体有限公司成立于2016年,是一家致力于功率半导体电子元器件研发与销售的高新技术型企业。公司研发团队主要来自中国台湾、美国硅谷及內地顶尖技术精英,公司总部坐落于中国深圳,在韩国和广州设有分公司。 铨力依靠专业的自主研发能力和先进的制造能力,为行业提供了超400KK/年的性能卓越的半导体产品,现有产品包括中低压MOSFET、AC-DC电源管理芯片等,铨力已经成为电脑、网通、消费性产品、手机、电池等行业长期合作伙伴,产品远销国内外。 我们始终坚持主动了解客户需求,通过不断研发创新,竭诚为客户提供绿色、节能、高效的功率半导体产品和解决方案,为客户的成功提供强力支撑。
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AP8205 Overview

Drain-source voltage (Vdss): 20V Continuous drain current (Id) (at 25°C): 6A Gate-source threshold voltage: 1.2V @ 250uA Drain-source on-resistance: 24mΩ @ 6A, 4.5V Maximum power dissipation ( Ta=25°C): 1.14W Type: Dual N-channel (common drain)

AP8205 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)20V
Continuous drain current (Id) at 25°C6A
Gate-source threshold voltage1.2V @ 250uA
Drain-source on-resistance24mΩ @ 6A,4.5V
Maximum power dissipation (Ta=25°C)1.14W
typeDual N-channel (common drain)

AP8205 Preview

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