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SI4435DY

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 8.8A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 20mΩ @ 8A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: P channel P channel -30V
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size437KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet Parametric View All

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SI4435DY Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 8.8A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 20mΩ @ 8A, 10V Maximum power dissipation (Ta =25°C): 2.5W Type: P channel P channel -30V

SI4435DY Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C8.8A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance20mΩ @ 8A,10V
Maximum power dissipation (Ta=25°C)2.5W
typeP channel
SMD Type
SMD Type
P-Channel MOSFET
SI4435DY
(KI4435DY)
MOSFET
SOP-8
Features
V
DS
=-30V
R
DS(on)
=0.02Ω@V
GS
=-10V
R
DS(on)
=0.035Ω@V
GS
=-4.5V
0.21
-0.02
+0.04
1.50
0.15
S
G
S
S
S
G
D
1
2
3
4
Top View
8
7
6
5
D
D
D
D
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Maximum Junction-to-Ambient
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
T
J
, T
stg
Rating
-30
±20
-8.8
-50
2.5
50
-55 to 150
Unit
V
V
A
A
W
℃/W
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