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SR2200

Description
DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 900mV @ 2A 2A
CategoryDiscrete semiconductor    Schottky diode   
File Size2MB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Parametric View All

SR2200 Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 900mV @ 2A 2A

SR2200 Parametric

Parameter NameAttribute value
Case StyleDO-15
IF(A)2
Maximum recurrent peak reverse voltage200
Peak forward surge current50
Maximum instantaneous forward voltage0.85
@IF(A)2
Maximum reverse current1
TJ(℃)/
classDiodes
2.0A
Schottky
Barrier Rectifiers
SR2200
DO-15
FEATURES
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-1 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 0.093 grams (Approximately)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25
°
C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
TYPE NUMBER
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
See Fig. 1
Peak Forward Surge Current, 8.3 ms single half sine-wave
Superimposed on rated load (JEDEC method)
Maximum Instantaneous Forward Voltage (IF = 2 Amps, T
A
= 25
°
C)
Maximum Instantaneous Forward Voltage (IF = 2 Amps, T
A
= 125
°
C)
Maximum DC Reverse Current at Rated DC
T
A
= 25
°
C
Blocking Voltage
(Note 3)
T
A
= 125
°
C
Typical Junction Capacitance
(Note 1)
Typical Thermal Resistance R
JL
(Note 2)
Voltage Rate of Chance (Rated V
R
)
Operating Temperature Range T
J
Storage Temperature Range T
STG
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Lead.
3. Pulse test: 300us pulse width, 1% duty cycle.
VALUES
200
200
200
2
50
0.90
0.72
0.2
8
70
10
10000
-50 ~ +150
-65 ~ +175
UNITS
V
V
V
A
A
V
mA
pF
°
C /W
V/us
°
C
°
C
ht
t
p
:
//
Revision:20170701-P1
www.lgesemi
.c
o
m
mail:lge@lgesemi.com
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