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VS3610AE

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 64A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 7mΩ @ 16A, 4.5V Maximum power dissipation ( Ta=25°C): 33W Type: N channel N channel 30V 64A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size768KB,6 Pages
ManufacturerVanguard
Websitehttp://www.vgsemi.com
The headquarters of Weizhao Semiconductor is located in the Nanshan Dashahe Innovation Corridor, a high-tech industrial park in Shenzhen Special Economic Zone, adjacent to the Shenzhen Institute of the Chinese Academy of Sciences and the Southern University of Science and Technology. It is a high-tech enterprise specializing in the design of discrete device series and the research and development of semiconductor microelectronics related products. With many years of experience in cooperation with well-known power supply manufacturers, it insists on deepening its roots in the field of discrete devices to enhance the performance competitiveness and market share of domestic discrete device brands. Weizhao focuses on achieving innovative, stable, efficient and low-cost overall solutions. After long-term efforts, it has become one of the few advanced IC design companies that have all series of low-voltage, medium-voltage and high-voltage high-power POWER MOSFET discrete devices, as well as special semiconductor process design capabilities. Products are widely used in computers, consumer electronics, LCD/LED displays, communication power supplies, industrial power supplies, as well as new energy industries such as solar energy, wind energy, and lithium batteries.
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VS3610AE Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 64A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 7mΩ @ 16A, 4.5V Maximum power dissipation ( Ta=25°C): 33W Type: N channel N channel 30V 64A

VS3610AE Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C64A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance7mΩ @ 16A,4.5V
Maximum power dissipation (Ta=25°C)33W
typeN channel

VS3610AE Preview

Download Datasheet
VS3610AE
30V/64A N-Channel Advanced Power MOSFET
Features
N-Channel,5V Logic Level Control
Enhancement mode
Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
Fast Switching
100% Avalanche test
Pb-free lead plating; RoHS compliant
V
DS
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5 V
I
D
30
4
5.7
64
PDFN3333
V
mΩ
mΩ
A
Part ID
VS3610AE
Package Type
PDFN3333
Marking
3610AE
Tape and reel
information
5000PCS/Reel
Maximum ratings, at
T
A
=25° unless otherwise specified
C,
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Continuous drain current@VGS=10V
Pulse drain current tested
Avalanche energy, single pulsed
Maximum power dissipation
Gate-Source voltage
Storage and operating temperature range
C
T
C
=25°
C
T
C
=25°
C
T
C
=25°
C
T
C
=100°
C
T
C
=25°
Rating
30
64
64
40
256
49
33
±
20
-55 to 150
Unit
V
A
A
A
A
mJ
W
V
°
C
V
(BR)DSS
I
S
I
D
I
DM
EAS
P
D
V
GS
T
STG
T
J
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
Typical
3.8
35
Unit
°
C/W
°
C/W
Copyright Vanguard Semiconductor Co., Ltd
Rev C – SEP, 2019
www.vgsemi.com
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