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VST012N06MS

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 55A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 14mΩ @ 20A, 4.5V Maximum power Dissipation (Ta=25°C): 115W(Tc) Type: N-channel N-channel 60V 55A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size320KB,5 Pages
ManufacturerVanguard
Websitehttp://www.vgsemi.com
The headquarters of Weizhao Semiconductor is located in the Nanshan Dashahe Innovation Corridor, a high-tech industrial park in Shenzhen Special Economic Zone, adjacent to the Shenzhen Institute of the Chinese Academy of Sciences and the Southern University of Science and Technology. It is a high-tech enterprise specializing in the design of discrete device series and the research and development of semiconductor microelectronics related products. With many years of experience in cooperation with well-known power supply manufacturers, it insists on deepening its roots in the field of discrete devices to enhance the performance competitiveness and market share of domestic discrete device brands. Weizhao focuses on achieving innovative, stable, efficient and low-cost overall solutions. After long-term efforts, it has become one of the few advanced IC design companies that have all series of low-voltage, medium-voltage and high-voltage high-power POWER MOSFET discrete devices, as well as special semiconductor process design capabilities. Products are widely used in computers, consumer electronics, LCD/LED displays, communication power supplies, industrial power supplies, as well as new energy industries such as solar energy, wind energy, and lithium batteries.
Download Datasheet Parametric View All

VST012N06MS Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 55A (Tc) Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 14mΩ @ 20A, 4.5V Maximum power Dissipation (Ta=25°C): 115W(Tc) Type: N-channel N-channel 60V 55A

VST012N06MS Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C55A(Tc)
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance14mΩ @ 20A,4.5V
Maximum power dissipation (Ta=25°C)115W(Tc)
typeN channel

VST012N06MS Preview

Download Datasheet
VST012N06MS
60V/55A N-Channel Advanced Power MOSFET
V
DS
60
8.4
9.8
55
V
mΩ
mΩ
A
Features
N-Channel,5V Logic Level Control
Enhancement mode
Very low on-resistance
R
DS(on)
@
V
GS
=4.5 V
Fast Switching
100% Avalanche Tested
Pb-free lead plating; RoHS compliant
R
DS(on),TYP
@
V
GS
=10 V
R
DS(on),TYP
@
V
GS
=4.5V
I
D
TO-220AB
Part ID
VST012N06MS
Package Type
TO-220AB
Marking
012N06M
Tape and reel
information
50pcs/Tube
Maximum ratings, at
T
j
=25 °C, unless otherwise specified
Symbol
Parameter
Drain-Source breakdown voltage
Diode continuous forward current
Continuous drain current@V
GS
=10V
Pulse drain current tested
Maximum power dissipation
Gate-Source voltage
Storage and operating temperature range
Rating
60
Unit
V
A
A
A
A
W
V
°C
V
(BR)DSS
I
S
T
C
=25°C
T
C
=25°C
T
C
=100°C
T
C
=25°C
T
C
=25°C
55
55
35
200
115
±20
-55 to 175
I
D
I
DM
P
D
V
GS
T
STG
T
J
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance-Junction to Case
Thermal Resistance Junction-Ambient
Typical
1.3
50
Unit
°C/W
°C/W
Drain-Source Avalanche Ratings
EAS
Avalanche Energy, Single Pulsed
156
mJ
Copyright Vanguard Semiconductor Co., Ltd
Rev1.0 – Jan.05
th
, 2017
www.vgsemi.com
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