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BUJ100LR,412

Description
Rated power: 2.1W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 400V Transistor type: NPN
CategoryDiscrete semiconductor    The transistor   
File Size353KB,12 Pages
ManufacturerWeEn Semiconductors
Download Datasheet Parametric View All

BUJ100LR,412 Overview

Rated power: 2.1W Collector current Ic: 1A Collector-emitter breakdown voltage Vce: 400V Transistor type: NPN

BUJ100LR,412 Parametric

Parameter NameAttribute value
MakerWeEn Semiconductors
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Factory Lead Time6 weeks
IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
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