IMPORTANT NOTICE
10 December 2015
1. Global joint venture starts operations as WeEn Semiconductors
Dear customer,
As from November 9th, 2015 NXP Semiconductors N.V. and Beijing JianGuang Asset
Management Co. Ltd established Bipolar Power joint venture (JV),
WeEn Semiconductors,
which
will be used in future Bipolar Power documents together with new contact details.
In this document where the previous NXP references remain, please use the new links as shown
below.
WWW
- For www.nxp.com use
www.ween-semi.com
Email
- For salesaddresses@nxp.com use
salesaddresses@ween-semi.com
For the copyright notice at the bottom of each page (or elsewhere in the document, depending
on the version) “
©
NXP Semiconductors N.V.
{year}.
All rights reserved”
becomes “
©
WeEn
Semiconductors Co., Ltd.
{year}.
All rights reserved”
If you have any questions related to this document, please contact our nearest sales office via e-
mail or phone (details via
salesaddresses@ween-semi.com).
Thank you for your cooperation and understanding,
WeEn Semiconductors
PHE13003C
13 October 2016
NPN power transistor
Product data sheet
1. General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92)
plastic package.
2. Features and benefits
•
•
•
•
Fast switching
High typical DC current gain
High voltage capability of 700 V
Very low switching and conduction losses
3. Applications
•
•
•
Compact fluorescent lamps (CFL)
Low power electronic lighting ballasts
Off-line self-oscillating power supplies (SOPS) for battery charging
4. Quick reference data
Table 1. Quick reference data
Symbol
I
C
P
tot
V
CESM
Parameter
collector current
total power dissipation
collector-emitter peak
voltage
DC current gain
Conditions
DC
T
lead
≤ 25 °C;
Fig. 1
V
BE
= 0 V
Min
-
-
-
Typ
-
-
-
Max
1.5
2.1
700
Unit
A
W
V
Static characteristics
h
FE
I
C
= 0.5 A; V
CE
= 2 V; T
lead
= 25 °C
I
C
= 1 A; V
CE
= 2 V; T
lead
= 25 °C
8
5
17
9
25
15
WeEn Semiconductors
PHE13003C
NPN power transistor
5. Pinning information
Table 2. Pinning information
Pin
1
2
3
Symbol Description
B
C
E
base
collector
emitter
321
B
E
sym123
Simplified outline
Graphic symbol
C
TO-92 (SOT54)
6. Ordering information
Table 3. Ordering information
Type number
PHE13003C
Package
Name
TO-92
Description
plastic single-ended leaded (through hole) package; 3 leads
Version
SOT54
PHE13003C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
13 October 2016
2 / 11
WeEn Semiconductors
PHE13003C
NPN power transistor
7. Limiting values
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
CESM
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
collector-emitter peak
voltage
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
storage temperature
junction temperature
120
P
der
(%)
80
003aae644
Conditions
V
BE
= 0 V
I
E
= 0 A
I
B
= 0 A
I
C
= 0 A; I(Emitter) = 10 mA
DC
DC
T
lead
≤ 25 °C;
Fig. 1
Min
-
-
-
-
-
-
-
-
-
-65
-
Max
700
700
400
9
1.5
3
0.75
1.5
2.1
150
150
Unit
V
V
V
V
A
A
A
A
W
°C
°C
40
0
0
50
100
150
200
T
lead
(°C)
Fig. 1. Normalized total power dissipation as a function of lead temperature
PHE13003C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
13 October 2016
3 / 11
WeEn Semiconductors
PHE13003C
NPN power transistor
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol
R
th(j-lead)
R
th(j-a)
Parameter
thermal resistance
from junction to lead
thermal resistance
from junction to
ambient free air
10
2
Z
th(j-lead)
(K/W)
10
Conditions
Fig. 2
in free air; printed circuit board
mounted; lead length = 4 mm
Min
-
-
Typ
-
150
Max
60
-
Unit
K/W
K/W
001aab451
1
P
10
-1
t
tp
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
10
Fig. 2. Transient thermal impedance from junction to lead as a function of pulse width
PHE13003C
All information provided in this document is subject to legal disclaimers.
©
WeEn Semiconductors Co., Ltd. 2016. All rights reserved
Product data sheet
13 October 2016
4 / 11
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