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JCS7HN60RC-DPAK

Description
Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 7A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.3Ω @ 3.5A, 10V Maximum power Dissipation (Ta=25°C): 120W(Tc) Type: N-channel N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size2MB,16 Pages
ManufacturerJilin Sino-Microelectronics
Websitehttp://www.hwdz.com.cn/About/164
HuaWei Electronics has multiple power semiconductor discrete devices and IC chip production lines such as 4-inch, 5-inch and 6-inch, with a chip processing capacity of 3.3 million pieces per year and packaging resources of 2.4 billion pieces per year. The company has many patents in terminal design, process manufacturing and product design. Each series of products adopts core manufacturing technologies such as IGBT, MOS, bipolar technology and integrated circuits. The company mainly produces power semiconductor devices and ICs, which are used in automotive electronics, power electronics, photovoltaic inverters, industrial control and LED lighting. At present, the company has formed a series of products with IGBT, VDMOS, FRED, SBD, BJT, IPM and other products as the main marketing lines, and has become a manufacturer that provides solutions to customers in the field of power semiconductor devices and a provider of LED lighting solutions.
Download Datasheet Parametric View All

JCS7HN60RC-DPAK Overview

Drain-source voltage (Vdss): 600V Continuous drain current (Id) (at 25°C): 7A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 1.3Ω @ 3.5A, 10V Maximum power Dissipation (Ta=25°C): 120W(Tc) Type: N-channel N-channel

JCS7HN60RC-DPAK Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)600V
Continuous drain current (Id) at 25°C7A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance1.3Ω @ 3.5A,10V
Maximum power dissipation (Ta=25°C)120W(Tc)
typeN channel

JCS7HN60RC-DPAK Preview

Download Datasheet
R
N 沟道增强型场效应晶½管
N-CHANNEL MOSFET
JCS7HN60C
主要参数
MAIN
CHARACTERISTICS
封装
Package
I
D
V
DSS
Rdson-max
(@Vgs=10V)
Qg-typ
用途
高频开关电源
电子镇流器
LED
电源
7.0 A
600 V
1.3Ω
32 nC
APPLICATIONS
High frequency switching
mode power supply
Electronic ballast
LED power supply
产品特性
½栅极电荷
½
C
rss
(典型值 14pF)
开关速度快
产品全部经过雪崩测试
高抗
dv/dt
½力
RoHS
产品
FEATURES
Low gate charge
Low C
rss
(typical 14pF )
Fast switching
100% avalanche tested
Improved dv/dt capability
RoHS product
订货信息
ORDER MESSAGE
订 货 型 号
Order codes
有卤-条管
无卤-条管
有卤-编带
无卤-编带
Marking
JCS7HN60V
JCS7HN60R
JCS7HN60B
JCS7HN60S
JCS7HN60C
JCS7HN60F
JCS7HN60F
Package
IPAK
DPAK
TO-262
TO-263
TO-220C
TO-220MF
TO-220MF-K2
Halogen-Tube
JCS7HN60VC-V-B
JCS7HN60RC-R-B
JCS7HN60BC-B-B
JCS7HN60SC-S-B
JCS7HN60CC-C-B
JCS7HN60FC-F-B
JCS7HN60FC-F2-B
Halogen-Free-Tube
JCS7HN60VC-V-BR
JCS7HN60RC-R-BR
JCS7HN60BC-B-BR
JCS7HN60SC-S-BR
JCS7HN60CC-C-BR
JCS7HN60FC-F-BR
JCS7HN60FC-F2-BR
Halogen-Reel
N/A
JCS7HN60RC-R-A
N/A
JCS7HN60SC-S-A
N/A
N/A
N/A
Halogen-Free -Reel
N/A
JCS7HN60RC-R-AR
N/A
JCS7HN60SC-S-AR
N/A
N/A
N/A
版本:201809L
1/16
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