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NCE3400AY

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.4V @ 250uA Drain-source on-resistance: 27mΩ @ 5.8A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size244KB,7 Pages
ManufacturerWuxi NCE Power Semiconductor Co., Ltd
Websitehttp://www.ncepower.com/
Download Datasheet Parametric View All

NCE3400AY Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 5.8A Gate-source threshold voltage: 1.4V @ 250uA Drain-source on-resistance: 27mΩ @ 5.8A, 10V Maximum power dissipation (Ta=25°C): 1.4W Type: N-channel

NCE3400AY Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C5.8A
Gate-source threshold voltage1.4V @ 250uA
Drain-source on-resistance27mΩ @ 5.8A,10V
Maximum power dissipation (Ta=25°C)1.4W
typeN channel
http://www.ncepower.com
NCE3400AY
NCE N-Channel
Enhancement Mode Power MOSFET
Description
The NCE3400AY uses advanced trench technology to provide
excellent R
DS(ON)
, low gate charge and operation with gate
voltages as low as 2.5V. This device is suitable for use as a
Battery protection or in other Switching application.
D
G
S
General Features
V
DS
= 30V,I
D
= 5.8A
R
DS(ON)
< 45mΩ @ V
GS
=2.5V
R
DS(ON)
< 31mΩ @ V
GS
=4.5V
R
DS(ON)
< 27mΩ @ V
GS
=10V
High power and current handing capability
Lead free product is acquired
Surface mount package
PWM applications
Load switch
Power management
Schematic diagram
Marking and pin assignment
SOT23-3L top view
Package Marking and Ordering Information
Device Marking
3400AY
Device
NCE3400AY
Device Package
SOT23-3L
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (T
A
=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
(Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
STG
Limit
30
±12
5.8
30
1.4
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient
(Note 2)
R
θJA
89
/W
Electrical Characteristics (T
A
=25℃unless otherwise noted)
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BV
DSS
I
DSS
V
GS
=0V I
D
=250μA
V
DS
=30V,V
GS
=0V
30
-
33
-
-
1
V
μA
Symbol
Condition
Min
Typ
Max
Unit
Wuxi NCE Power Co., Ltd
Page1
v2.0
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