Product specification
P-Channel Enhancement Mode Power Mosfet
FEATURES
Super High Dense Cell Design for Extremely
Low R
DS(ON)
BL2305
Pb
Lead-free
Reliable and Rugged
Electrostatic Sensitive Devices.
MSL1
APPLICATIONS
Power Management in Notebook.
Portable Equipment.
Battery Powered System.
SOT-23
ORDERING INFORMATION
Type No.
BL2305
□
Marking
2305
Package Code
SOT-23
□:
none is for Lead Free package;
“G” is for Halogen Free package.
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
DSS
V
GSS
I
D
I
DM
P
D
R
θJA
T
J,
T
stg
Parameter
Drain-Source voltage
Gate -Source voltage
Maximum Drain current
T
A
=25℃
T
A
=70℃
Value
-12
±8
-4.2
-3.4
-10
1.37
90
-55~+150
Units
V
V
A
A
W
℃/W
℃
Pulsed Drain current
Power Dissipation
Thermal resistance,Junction-to-Ambient
Operating Junction and Storage
Temperature Range
MTM0047A
www.gmesemi.com
1
Product specification
P-Channel Enhancement Mode Power Mosfet
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Forward Transconductance
Gate-body Leakage
Zero Gate Voltage Drain Current
Symbol
V
(BR)DSS
V
GS(th)
gfs
I
GSS
I
DSS
Test conditions
V
GS
=0V,I
D
=-250μA
V
DS
=V
GS
, I
D
=-250μA
V
DS
=-5V,I
D
=-2.8A
V
DS
=0V, V
GS
=8V
V
DS
=0V, V
GS
=-8V
V
DS
=-12V, V
GS
=0V
V
GS
=-10V,I
D
=-4.5A
V
GS
=-4.5V,I
D
=-4.2A
V
GS
=-2.5V,I
D
=-2.0A
V
GS
=-1.8V,I
D
=-1.0A
V
GS
=0V,I
S
=-1.2A
V
DS
=-16V,V
GS
=-4.5V,
I
D
=-4.2A
MIN
-12
-0.5
-
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
=-15V,V
GS
=0V,f=1.0MHz
-
-
V
DS
= -15V, I
D
= -4.2A,
R
G
= 6Ω, V
GS
= -10V,
R
D
= 3.6Ω
I
S
=-4.2A,V
GS
=0
dI/dt=100A/us
-
-
-
-
-
-
BL2305
TYP
-
-
9
-
-
-
-
-
-
-
-
10.6
2.32
3.68
740
167
126
5.9
3.6
32.4
2.6
27.7
22
MAX
-
-
-
100
-100
-1
53
65
100
250
-1.2
-
-
-
-
-
-
-
-
-
-
-
-
ns
nC
ns
pF
nC
UNIT
V
S
nA
μA
Drain-Source on-resistance
R
DS(ON)
mΩ
Diode forward voltage
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Reverse Recovery Time
Reverse Recovery Charge
V
SD
Qg
Qgs
Qgd
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
R
Trr
Qrr
V
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
MTM0047A
www.gmesemi.com
2
Product specification
P-Channel Enhancement Mode Power Mosfet
BL2305
MTM0047A
www.gmesemi.com
3
Product specification
P-Channel Enhancement Mode Power Mosfet
BL2305
MTM0047A
www.gmesemi.com
4
Product specification
P-Channel Enhancement Mode Power Mosfet
PACKAGE OUTLINE
Plastic surface mounted package
A
BL2305
SOT-23
SOT-23
Dim
E
Min
2.70
1.10
0.90
0.30
0.35
1.80
0.02
0.05
2.20
Max
3.10
1.50
1.10
0.50
0.48
2.00
0.10
0.15
2.60
A
B
C
D
K
B
D
G
H
J
E
G
H
J
K
C
All Dimensions in mm
SOLDERING FOOTPRINT
0.95
0.95
2.00
0.90
0.80
Unit : mm
PACKAGE
Device
BL2305
INFORMATION
Package
SOT-23
Shipping
3000/Tape&Reel
MTM0047A
www.gmesemi.com
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