AP30T10GM-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Simple Drive Requirement
▼
Lower Gate Charge
▼
Fast Switching Characteristic
▼
Halogen Free & RoHS Compliant
D
D
D
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
S
G
100V
55mΩ
4.5A
D
I
D
3
SO-8
S
S
Description
AP30T10 series are from Advanced Power innovated design and
silicon process technology to achieve the lowest possible on-
resistance and fast switching performance. It provides the designer
with an extreme efficient device for use in a wide range of power
applications.
The SO-8 package is widely preferred for all commercial-industrial
surface mount applications using infrared reflow technique and
suited for voltage conversion or switch applications.
G
S
o
Absolute Maximum Ratings@T
j
=25 C(unless otherwise specified)
Symbol
V
DS
V
GS
I
D
@T
A
=25℃
I
D
@T
A
=70℃
I
DM
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current , V
GS
@ 10V
3
Drain Current , V
GS
@ 10V
3
.
Rating
100
+20
4.5
3.6
20
2.5
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
℃
℃
Pulsed Drain Current
1
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-ambient
3
Value
50
Units
℃/W
1
201411072
Data and specifications subject to change without notice
AP30T10GM-HF
Electrical Characteristics@T
j
=25 C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
o
Test Conditions
V
GS
=0V, I
D
=250uA
V
GS
=10V, I
D
=4A
V
GS
=5V, I
D
=2A
Min.
100
-
-
0.9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
39
56
1.5
6.5
-
-
11.5
3
7
6.5
6.5
23
11
850
115
80
1.4
Max. Units
-
55
90
2.5
-
25
+100
18.4
-
-
-
-
-
-
1360
-
-
2.8
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=4A
V
DS
=80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=4A
V
DS
=50V
V
GS
=4.5V
V
DS
=50V
I
D
=1A
R
G
=3.3Ω
V
GS
=10V
V
GS
=0V
V
DS
=25V
.
f=1.0MHz
f=1.0MHz
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Test Conditions
I
S
=2A, V
GS
=0V
I
S
=4A,
V
GS
=0
V
,
dI/dt=100A/µs
Min.
-
-
-
Typ.
-
40
60
Max. Units
1.3
-
-
V
ns
nC
Reverse Recovery Time
Reverse Recovery Charge
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board, t <10sec ; 125
℃/W
when mounted on Min. copper pad.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30T10GM-HF
50
40
T
A
= 25 C
40
o
I
D
, Drain Current (A)
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
T
A
= 150
o
C
30
10V
7.0V
6.0V
5.0V
30
V
G
= 4.0V
20
V
G
= 4.0V
20
10
10
0
0
2
4
6
8
10
0
0
2
4
6
8
10
12
14
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.4
I
D
=2A
T
A
=25 C
2.0
o
I
D
=4A
V
G
=10V
R
DS(ON)
(m
Ω
)
70
Normalized R
DS(ON)
1.6
60
.
1.2
50
0.8
40
2
4
6
8
10
0.4
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.6
2
I
D
=250uA
T
j
=150
o
C
1
T
j
=25
o
C
Normalized V
GS(th)
1.5
1.2
I
S
(A)
0.8
0.5
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
0.0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP30T10GM-HF
10
1600
f=1.0MHz
V
GS
, Gate to Source Voltage (V)
8
I
D
=4A
V
DS
= 50 V
1200
C (pF)
6
800
C
iss
4
400
2
C
oss
C
rss
0
0
4
8
12
16
20
0
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
Duty factor=0.5
10
Normalized Thermal Response (R
thja
)
Operation in this area
limited by R
DS(ON)
0.2
I
D
(A)
1
100us
1ms
10ms
100ms
0.1
0.1
0.05
.
0.02
0.01
0.1
P
DM
0.01
1s
0.01
t
T
Single Pulse
T
A
=25
o
C
Single Pulse
0.1
1
10
100
DC
Duty factor = t/T
Peak T
j
= P
DM
x R
thja
+ T
a
R
thja
= 125℃/W
0.001
0.001
0.01
1000
0.0001
0.001
0.01
0.1
1
10
100
1000
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
30
6
V
DS
=5V
5
I
D
, Drain Current (A)
I
D
, Drain Current (A)
20
4
3
10
T
j
=150
o
C
o
T
j
=25 C
2
1
T
j
=-40
o
C
0
0
2
4
6
8
0
25
50
75
100
125
150
V
GS
, Gate-to-Source Voltage (V)
T
A
, Ambient Temperature ( C )
o
Fig 11. Transfer Characteristics
Fig 12. Drain Current v.s. Ambient
Temperature
4
AP30T10GM-HF
MARKING INFORMATION
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
30T10GM
YWWSSS
.
5
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