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IXTQ88N30P

Description
Drain-source voltage (Vdss): 300V Continuous drain current (Id) (at 25°C): 88A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 40mΩ @ 44A, 10V Maximum power dissipation (Ta=25°C): 600W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size363KB,6 Pages
ManufacturerIXYS ( Littelfuse )
Websitehttp://www.ixys.com/
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IXTQ88N30P Overview

Drain-source voltage (Vdss): 300V Continuous drain current (Id) (at 25°C): 88A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 40mΩ @ 44A, 10V Maximum power dissipation (Ta=25°C): 600W(Tc) Type: N channel

IXTQ88N30P Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)300V
Continuous drain current (Id) at 25°C88A(Tc)
Gate-source threshold voltage5V @ 250uA
Drain-source on-resistance40mΩ @ 44A,10V
Maximum power dissipation (Ta=25°C)600W(Tc)
typeN channel
PolarHT
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTH 88N30P
IXTK 88N30P
IXTQ 88N30P
IXTT 88N30P
V
DSS
I
D25
R
DS(on)
= 300 V
= 88 A
40 mΩ
TO-247 (IXTH)
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25° C to 150° C
T
J
= 25° C to 150° C; R
GS
= 1 MΩ
Continuous
Transient
T
C
= 25° C
External lead current limit
T
C
= 25° C, pulse width limited by T
JM
T
C
= 25° C
T
C
= 25° C
T
C
= 25° C
I
S
I
DM
, di/dt
100 A/µs, V
DD
V
DSS
T
J
150° C, R
G
= 4
T
C
= 25° C
Maximum Ratings
G
300
300
±20
±30
88
75
220
60
60
2.0
10
600
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
A
mJ
J
V/ns
W
°C
°C
°C
°C
°C
G
D
D (TAB)
S
TO-264 (IXTK)
D
S
D (TAB)
TO-3P (IXTQ)
G
D
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque
TO-247
TO-264
TO-3P & TO-268
300
260
S
(TAB)
TO-268 (IXTT)
1.13/10 Nm/lb.in.
6.0
10
5.5
g
g
g
G = Gate
S = Source
G
S
D = Drain
TAB = Drain
D (TAB)
Symbol
Test Conditions
(T
J
= 25° C, unless otherwise specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0 V, I
D
= 250
µA
V
DS
= V
GS
, I
D
= 250µA
V
GS
=
±20
V
DC
, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 125° C
Characteristic Values
Min. Typ.
Max.
300
2.5
5.0
±100
100
1
40
V
V
nA
µA
mA
m
Features
l
International standard package
l
Unclamped Inductive Switching (UIS)
rated
l
Low package inductance
- easy to drive and to protect
Advantages
l
Easy to mount
l
Space savings
l
High power density
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
300
µs,
duty cycle d
2 %
© 2006 IXYS All rights reserved
DS99129E(12/05)

IXTQ88N30P Related Products

IXTQ88N30P
Description Drain-source voltage (Vdss): 300V Continuous drain current (Id) (at 25°C): 88A (Tc) Gate-source threshold voltage: 5V @ 250uA Drain-source on-resistance: 40mΩ @ 44A, 10V Maximum power dissipation (Ta=25°C): 600W(Tc) Type: N channel
Drain-source voltage (Vdss) 300V
Continuous drain current (Id) at 25°C 88A(Tc)
Gate-source threshold voltage 5V @ 250uA
Drain-source on-resistance 40mΩ @ 44A,10V
Maximum power dissipation (Ta=25°C) 600W(Tc)
type N channel
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