Polar2
TM
HiPerFET
TM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
IXFK94N50P2
IXFX94N50P2
V
DSS
I
D25
=
=
R
DS(on)
≤
500V
94A
55mΩ
Ω
TO-264 (IXFK)
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
DM
I
A
E
AS
P
D
dV/dt
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
F
C
Weight
Test Conditions
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C, R
GS
= 1MΩ
Continuous
Transient
T
C
= 25°C
T
C
= 25°C, Pulse Width Limited by T
JM
T
C
= 25°C
T
C
= 25°C
T
C
= 25°C
I
S
≤
I
DM
, V
DD
≤
V
DSS
, T
J
≤
150°C
Maximum Ratings
500
500
±
30
±
40
94
240
94
3.5
1300
30
-55 ... +150
150
-55 ... +150
V
V
V
V
A
A
A
J
W
V/ns
°C
°C
°C
°C
°C
Nm/lb.in.
N/lb.
g
g
G
D
S
Tab
PLUS247 (IXFX)
G
D
S
Tab
D = Drain
Tab = Drain
G = Gate
S = Source
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Mounting Torque (TO-264)
Mounting Force
TO-264
PLUS247
(PLUS247)
300
260
1.13/10
20..120 /4.5..27
10
6
Features
Fast Intrinsic Diode
Dynamic dv/dt Rating
Avalanche Rated
Low R
DS(ON)
and Q
G
Low Package Inductance
Advantages
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 1mA
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
30V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 125°C
Characteristic Values
Min.
Typ.
Max.
500
3.0
5.0
±
200
V
V
nA
High Power Density
Easy to Mount
Space Savings
Applications
Switch-Mode and Resonant-Mode
Power Supplies
DC-DC Converters
Battery Chargers
Uninterrupted Power Supplies
AC and DC Motor Drives
High Speed Power Switching
Application
10
μA
2 mA
55 mΩ
V
GS
= 10V, I
D
= 0.5 • I
D25
, Note 1
© 2011 IXYS CORPORATION, All Rights Reserved
DS100215B(9/11)
IXFK94N50P2
IXFX94N50P2
Symbol
Test Conditions
(T
J
= 25°C Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
R
Gi
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCS
0.15
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Gate Input Resistance
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 1Ω (External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 0.5 • I
D25
, Note 1
Characteristic Values
Min.
Typ.
Max.
40
75
14.2
1390
30
0.80
35
15
73
12
228
63
80
S
nF
pF
pF
Ω
ns
ns
ns
ns
nC
nC
nC
0.096
°C/W
°C/W
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
Millimeter
Min.
Max.
4.82
5.13
2.54
2.89
2.00
2.10
1.12
1.42
2.39
2.69
2.90
3.09
0.53
0.83
25.91 26.16
19.81 19.96
5.46 BSC
0.00
0.25
0.00
0.25
20.32 20.83
2.29
2.59
3.17
3.66
6.07
6.27
8.38
8.69
3.81
4.32
1.78
2.29
6.04
6.30
1.57
1.83
Terminals: 1 - Gate
2 - Drain
3 - Source
4 - Drain
Inches
Min.
Max.
.190
.202
.100
.114
.079
.083
.044
.056
.094
.106
.114
.122
.021
.033
1.020
1.030
.780
.786
.215 BSC
.000
.010
.000
.010
.800
.820
.090
.102
.125
.144
.239
.247
.330
.342
.150
.170
.070
.090
.238
.248
.062
.072
TO-264 Outline
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25°C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
Q
RM
I
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= I
S
, V
GS
= 0V, Note 1
I
F
= 47A, -di/dt = 100A/μs
V
R
= 100V, V
GS
= 0V
1.5
13
Characteristic Values
Min.
Typ.
Max.
94
375
1.5
250
A
A
V
ns
μC
A
PLUS 247
TM
Outline
Terminals: 1 - Gate
2 - Drain
3 - Source
Note 1.
Pulse test, t
≤
300μs, duty cycle, d
≤
2%.
Dim.
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
Q
R
6,404,065 B1
6,534,343
6,583,505
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
Millimeter
Min. Max.
4.83
5.21
2.29
2.54
1.91
2.16
1.14
1.40
1.91
2.13
2.92
3.12
0.61
0.80
20.80 21.34
15.75 16.13
5.45 BSC
19.81 20.32
3.81
4.32
5.59
6.20
4.32
4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 0.244
.170 .190
7,157,338B2
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
IXFK94N50P2
IXFX94N50P2
Fig. 1. Output Characteristics @ T
J
= 25ºC
100
90
80
70
V
GS
= 10V
7V
200
180
160
140
V
GS
= 10V
8V
7V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
60
50
40
30
20
10
0
0
1
2
3
4
5
6
5V
6V
I
D
- Amperes
120
100
80
60
40
20
0
0
5
10
15
20
25
30
5V
6V
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 125ºC
100
90
80
6V
V
GS
= 10V
7V
3.2
Fig. 4. R
DS(on)
Normalized to I
D
= 47A Value vs.
Junction Temperature
V
GS
= 10V
2.8
R
DS(on)
- Normalized
70
2.4
I
D
= 94A
2.0
I
D
= 47A
1.6
I
D
- Amperes
60
50
40
30
20
5V
1.2
0.8
10
0
0
2
4
6
8
10
12
14
4V
0.4
-50
-25
0
25
50
75
100
125
150
V
DS
- Volts
T
J
- Degrees Centigrade
Fig. 5. R
DS(on)
Normalized to I
D
= 47A Value vs.
Drain Current
3.2
V
GS
= 10V
2.8
T
J
= 125ºC
100
90
80
70
Fig. 6. Maximum Drain Current vs.
Case Temperature
R
DS(on)
- Normalized
I
D
- Amperes
T
J
= 25ºC
2.4
60
50
40
30
20
2.0
1.6
1.2
10
0.8
0
20
40
60
80
100
120
140
160
180
200
0
-50
-25
0
25
50
75
100
125
150
I
D
- Amperes
T
C
- Degrees Centigrade
© 2011 IXYS CORPORATION, All Rights Reserved
IXFK94N50P2
IXFX94N50P2
Fig. 7. Input Admittance
120
140
T
J
= - 40ºC
Fig. 8. Transconductance
100
120
T
J
= 125ºC
25ºC
- 40ºC
100
g
f s
- Siemens
80
25ºC
125ºC
I
D
- Amperes
80
60
60
40
40
20
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
0
0
10
20
30
40
50
60
70
80
90
100
110
120
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
10
9
250
8
7
V
DS
= 250V
I
D
= 47A
I
G
= 10mA
Fig. 10. Gate Charge
200
I
S
- Amperes
V
GS
- Volts
T
J
= 125ºC
T
J
= 25ºC
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
6
5
4
3
2
1
150
100
50
0
0
0
50
100
150
200
250
V
SD
- Volts
Q
G
- NanoCoulombs
Fig. 11. Capacitance
100,000
1000
Fig. 12. Forward-Bias Safe Operating Area
R
DS(on)
Limit
f
= 1 MHz
Capacitance - PicoFarads
10,000
Ciss
100
100µs
I
D
- Amperes
1,000
Coss
10
1ms
100
Crss
1
T
J
= 150ºC
T
C
= 25ºC
Single Pulse
10
0
5
10
15
20
25
30
35
40
0.1
10
100
1,000
10ms
100ms
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFK94N50P2
IXFX94N50P2
Fig. 13. Maximum Transient Thermal Impedance
1
0.1
Z
(th )JC
- ºC / W
0.01
0.001
0.0001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
© 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_94N50P (93) 8-31-10
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