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LMBTA42LT1G

Description
Rated power: 225mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 300V Transistor type: NPN NPN 300V 500mA Silk screen 1D Complies with ROHS environmental protection requirements Function and pin sequence are the same as MMBTA42
CategoryDiscrete semiconductor    triode   
File Size79KB,4 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

LMBTA42LT1G Overview

Rated power: 225mW Collector current Ic: 500mA Collector-emitter breakdown voltage Vce: 300V Transistor type: NPN NPN 300V 500mA Silk screen 1D Complies with ROHS environmental protection requirements Function and pin sequence are the same as MMBTA42

LMBTA42LT1G Parametric

Parameter NameAttribute value
rated power225mW
Collector current Ic500mA
Collector-emitter breakdown voltage Vce300V
Transistor typeNPN
LESHAN RADIO COMPANY, LTD.
High Voltage Transistors
We declare that the material of product
compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC-Q101 Qualified and
PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
LMBTA42LT1G
LMBTA42LT3G
LMBTA43LT1G
LMBTA43LT3G
Marking
1D
1D
M1E
M1E
Package
SOT-23
SOT-23
SOT-23
SOT-23
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
LMBTA42LT1G
LMBTA43LT1G
S-LMBTA42LT1G
S-LMBTA43LT1G
3
1
2
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
I
C
Value
LMBTA42 LMBTA43
300
300
6.0
500
200
200
6.0
Unit
Vdc
Vdc
Vdc
mAdc
1
BASE
SOT–23
3
COLLECTOR
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Symbol
P
D
Max
225
1.8
556
300
2.4
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Max
Unit
2
EMITTER
R
θJA
P
D
Thermal Resistance, Junction to Ambient
R
θJA
417
–55 to +150
Junction and Storage Temperature
T
J
, T
stg
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(3)
(I
C
= 1.0 mAdc, I
B
= 0)
Collector–Base Breakdown Voltage
(I
C
= 100
µAdc,
I
E
= 0)
Emitter–Base Breakdown Voltage
(I
E
= 100
µAdc,
I
C
= 0)
Collector Cutoff Current
( V
CB
= 200Vdc, I
E
= 0)
( V
CB
= 160Vdc, I
E
= 0)
Emitter Cutoff Current
( V
EB
= 6.0Vdc, I
C
= 0)
( V
EB
= 4.0Vdc, I
C
= 0)
LMBTA42
LMBTA43
LMBTA42
LMBTA43
I
EBO
0.1
0.1
LMBTA42
LMBTA43
V
(BR)EBO
V
(BR)CEO
Vdc
300
200
Vdc
300
200
6.0
Vdc
µAdc
0.1
0.1
µAdc
LMBTA42
LMBTA43
V
(BR)CBO
I
CBO
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
3. Pulse Test: Pulse Width <300
µs,
Duty Cycle <2.0%.
Rev.A 1/4
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