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LBAT54ALT1G

Description
DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 320mV @ 1mA 30V, 0.2A, VF=0.32V@1mA
CategoryDiscrete semiconductor    diode   
File Size362KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Environmental Compliance
Download Datasheet Parametric View All

LBAT54ALT1G Overview

DC reverse withstand voltage (Vr): 30V Average rectified current (Io): 200mA Forward voltage drop (Vf): 320mV @ 1mA 30V, 0.2A, VF=0.32V@1mA

LBAT54ALT1G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerLRC
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.24 V
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
Maximum non-repetitive peak forward current0.6 A
Number of components2
Number of terminals3
Maximum operating temperature125 °C
Maximum output current0.2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation0.225 W
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.005 µs
surface mountYES
technologySCHOTTKY
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
These Schottky barrier diodes are designed for high speed
switching
applications, circuit protection, and voltage clamping. Extremely
low forward voltage reduces conduction loss. Miniature surface
mount is excellent for hand held and portable applications
package
where is limited.
space
●FEATURES
1)Extremely Fast Switching Speed
2) Low Forward Voltage — 0.35 Volts (Typ) @ I
F
= 10 mAdc
3)We declare that the material of product compliant with
RoHS requirements and Halogen Free.
4)S- Prefix for automotive and other applications requiring unique
site and control change requirements; AEC-Q101 qualified and
PPAP capable.
●DEVICE
MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
3000/Tape&Reel
LBAT54ALT1G
B6
10000/Tape&Reel
LBAT54ALT3G
B6
●MAXIMUM
RATINGS(Ta = 25℃)
Symbol
Limits
Unit
Rating
V
R
DC reverse voltage
30
V
P
F
Forward Power Dissipation
@T
A
= 25°
C
225
mW
Derate above 25°
C
1.8
mW/°
C
I
F
DC forward current
200Max
mA
Junction temperature
T
J
125Max
Storage temperature
−55∼+150
Tstg
●ELECTRICAL
CHARACTERISTICS (Ta= 25℃)
Parameter
Symbol Min.
Typ.
Reverse Breakdown
V
(BR)R
30
Voltage
C
T
Total Capacitance
I
R
Reverse current
0.5
V
F
Forward voltage
0.22
V
F
Forward voltage
0.29
V
F
Forward voltage
0.35
V
F
Forward voltage
0.41
V
F
Forward voltage
0.52
trr
Reverse Recovery Time
Repetitive Peak
I
FRM
Forward Current
Non–Repetitive Peak
I
FSM
Forward Current
Max.
10
2
0.24
0.32
0.4
0.5
1
5
300
600
Unit
V
pF
LBAT54ALT1G
S-LBAT54ALT1G
30 VOLTS SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODES
3
1
2
SOT–23 (TO–236AB)
CATHODE
1
3
ANODE
2
CATHODE
Conditions
I
R
= 10 μA
V
R
= 1.0 V, f = 1.0 MHz
μA
V
R
=25V
V I
F
=0.1mA
V I
F
=1mA
V I
F
=10mA
V I
F
=30mA
V I
F
=100mA
ns
I
F
= I
R
= 10mA,I
R(REC)
= 1.0 mA
mA
mA
(t < 1.0 s)
May,2015
Rev.C 1/3
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