EEWORLDEEWORLDEEWORLD

Part Number

Search

L8050HRLT1G

Description
Rated power: 300mW Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 25V Transistor type: NPN NPN 25V 1.5A
CategoryDiscrete semiconductor    triode   
File Size78KB,3 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric View All

L8050HRLT1G Overview

Rated power: 300mW Collector current Ic: 1.5A Collector-emitter breakdown voltage Vce: 25V Transistor type: NPN NPN 25V 1.5A

L8050HRLT1G Parametric

Parameter NameAttribute value
rated power300mW
Collector current Ic1.5A
Collector-emitter breakdown voltage Vce25V
Transistor typeNPN
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
FEATURE
High current capacity in compact package.
I
C
=1.5 A.
Epitaxial planar type.
NPN complement: L8050H
Pb-Free Package is available.
L8050HQLTIG
Series
S-L8050HQLTIG
Series
3
S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
1
2
SOT–23
DEVICE MARKING AND ORDERING INFORMATION
Device
L8050HPLT1G
L8050HPLT3G
L8050HQLT1G
L8050HQLT3G
L8050HRLT1G
L8050HRLT3G
L8050HSLT1G
L8050HSLT3G
Marking
Shipping
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
3000/Tape&Reel
10000/Tape&Reel
1
BASE
2
EMITTER
COLLECTOR
3
S-L8050HPLT1G
S-L8050HPLT3G
S-L8050HQLT1G
S-L8050HQLT3G
S-L8050HRLT1G
S-L8050HRLT3G
S-L8050HSLT1G
S-L8050HSLT3G
1HA
1HA
1HC
1HC
1HE
1HE
1HG
1HG
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Symbol
V
CEO
V
CBO
V
EBO
I
C
Max
25
40
5
1500
Unit
V
V
V
mAdc
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR-5 Board,(1)
T
A
=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Total Device Dissipation
Alumina Substrate,(2) TA=25°C
Derate above 25°C
Thermal Resistance,Junction to Ambient
Junction and Storage Temperature
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
R
θ
J A
T
j,
T
S
t
g
R
θ
J A
P
D
300
2.4
417
-55 to +150
mW
mW/°C
°C/W
°C
Symbol
P
D
Max
Unit
225
1.8
556
mW
mW/°C
°C/W
Rev.A 1/3
I hope the experts can give me some advice.
I have a problem and hope that experts can give me some advice. If there is an irregular DC pulse wave (2.0v-28v 0-160ma), and I want to collect it into a battery with a floating voltage of DC10v, how...
likrat Creative Market
Introduction to MSP430 Series MCU
Introduction to MSP430 Series MCU...
songbo Microcontroller MCU
Thank you! Urgently needed
Give me some Arduino programming C code...
jingdongbo Embedded System
For AC grid-connected inverter, is it necessary to build an AC small signal model first?
For an AC grid-connected inverter, do we first need to build an AC small signal model, then use MATLAB to simulate it, and then choose the power devices of the main circuit topology and implement the ...
为爱向前冲 DSP and ARM Processors
MPU memory protection module
[align=left]When programming in static languages such as C, the most obscure error problem is array overflow. Array overflow problems usually occur when executing programs dynamically, and the error f...
jorya_txj Embedded System
TYPE-C charger related tests
I would like to ask for advice from all the experts: When testing a TYPE-C charger, if you want to test parameters such as load voltage, load current, and short-circuit test, you need to connect the c...
研发DQA组长 LED Zone

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1657  341  1759  1512  2903  34  7  36  31  59 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号