LESHAN RADIO COMPANY, LTD.
Surface Mount
Schottky Power Rectifier
Plastic SOD–123 Package
Features
•
Small power mold type.
•
Low I
R
.
•
High reliability.
•
We declare that the material of product compliance with RoHS requirements.
LMBR140T1G
Construction
•
Silicon epitaxial planar
SOD–123
Mechanical Characteristics
•
•
•
•
•
Device Marking: S7
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
•
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
1
Cathode
2
Anode
ORDERING INFORMATION
Device
LMBR140T1G
LMBR140T3G
Package
SOD−123
SOD−123
Shipping
3000/Tape & Reel
10,000/Tape & Reel
Absolute maximum ratings
(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Symbol
V
RM
V
R
Io
I
FSM
Tj
Tstg
Limits
40
40
1
5.5
150
-40 to +150
Unit
V
V
A
A
℃
℃
(*1)Mounted on epoxy board. 180°Half sine wave
Electrical characteristics
(Ta=25°C)
Parameter
Symbol
Forward voltage
Reverse current
V
F
I
R
Min.
-
-
Typ.
0.54
4.0
Max.
0.56
30
Unit
V
µA
Conditions
I
F
=1.0A
V
R
=40V
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LMBR140T1G
Electrical characteristic curves
(Ta=25°C)
1000
Ta=75℃
FORWARD CURRENT:IF(mA)
REVERSE CURRENT:IR(uA)
Ta=125℃
100
Ta=150℃
Ta=25℃
10
Ta=-25℃
10000
Ta=150℃
1000
Ta=125℃
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
f=1MHz
1000
100
10
1
0.1
0.01
0
5
Ta=75℃
Ta=25℃
Ta=-25℃
100
10
1
0
100
200
300
400
500
600
FORWARD VOLTAGE：VF(mV)
VF-IF CHARACTERISTICS
1
10 15 20 25 30 35
REVERSE VOLTAGE：VR(V)
VR-IR CHARACTERISTICS
40
0
5
10
15
20
25
30
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
480
FORWARD VOLTAGE:VF(mV)
470
460
450
AVE:454.3mV
440
430
VF DISPERSION MAP
Ta=25℃
VF=1A
n=30pcs
30
REVERSE CURRENT:IR(uA)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
300
Ta=25℃
VR=40V
n=30pcs
290
280
270
260
250
240
230
220
210
200
AVE:279.7pF
Ta=25℃
f=1MHz
VR=0V
n=10pcs
25
20
15
10
5
0
IR DISPERSION MAP
AVE:4.08uA
Ct DISPERSION MAP
200
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1cyc
8.3ms
RESERVE RECOVERY TIME:trr(ns)
30
25
20
15
10
5
0
IFSM DISRESION MAP
trr DISPERSION MAP
AVE:10.4ns
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
100
80
60
40
Ifsm
20
0
1
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
100
8.3ms 8.3ms
1cyc
150
100
50
AVE:83.0A
0
200
PEAK SURGE
FORWARD CURRENT:IFSM(A)
Ifsm
1000
Mounted on epoxy board
1
IM=10mA
IF=0.5A
TRANSIENT
THAERMAL IMPEDANCE:Rth (℃/W)
Rth(j-a)
0.9
0.8
FORWARD POWER
DISSIPATION:Pf(W)
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Sin(θ＝180)
DC
D=1/2
150
t
100
1ms
time
300us
Rth(j-c)
10
100
50
1
0
0.1
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
0.1
0.001
0.01
TIME:t(s)
Rth-t CHARACTERISTICS
0.1
1
10
100
1000
0
0.5
1
1.5
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
2
Rev.O 2/4
LESHAN RADIO COMPANY, LTD.
LMBR140T1G
0.05
0.04
REVERSE POWER
DISSIPATION:P
R
(W)
0.03
DC
0.02
0.01
0
0
10
20
30
REVERSE VOLTAGE:VR(V)
VR-P
R
CHARACTERISTICS
40
D=1/2
Sin(θ＝180)
3
3
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
0A
0V
DC
D=1/2
Io
t
T
VR
D=t/T
VR=20V
Tj=150℃
2.5
2
1.5
D=1/2
1
0.5
0
0
25
50
75
100
125
150
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
2.5
0A
0V
DC
Io
t
T
VR
D=t/T
VR=20V
Tj=150℃
2
1.5
1
0.5
Sin(θ＝180)
Sin(θ＝180)
0
25
50
75
100
125
150
0
AMBIENT TEMPERATURE:Ta(℃)
Derating Curveﾞ(Io-Ta)
CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Tc)
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
25
20
15
10
5
AVE:7.30kV
0
C=200pF
R=0Ω
C=100pF
R=1.5kΩ
ESD DISPERSION MAP
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LMBR140T1G
PACKAGE DIMENSIONS
SOD–123
A
C
H
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
E
H
J
K
INCHES
MIN
MAX
0.055
0.071
0.100
0.112
0.037
0.053
0.020
0.028
0.004
–––
0.000
0.004
–––
0.006
0.140
0.152
MILLIMETERS
MIN
MAX
1.40
1.80
2.55
2.85
0.95
1.35
0.50
0.70
0.25
–––
0.00
0.10
–––
0.15
3.55
3.85
K
2.36
0.093
4.19
0.165
SOD–123
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2
B
E
J
STYLE 1:
PIN 1. CATHODE
2. ANODE
D
RECOMMENDED FOOTPRINT FOR SOD–123
0.91
0.036
1.22
0.048
mm
inches
Rev.O 4/4
Microcontroller MCU
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