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EFMBF204

Description
DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV @ 2A Reverse recovery time (trr): 35ns
CategoryDiscrete semiconductor    Fast recovery diode   
File Size231KB,9 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

EFMBF204 Overview

DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV @ 2A Reverse recovery time (trr): 35ns

EFMBF204 Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)200V
Average rectified current (Io)2A
Forward voltage drop (Vf)950mV @ 2A
Reverse recovery time (trr)35ns
EFMBF201 thru EFMBF208
Surface Mount Glass Passivated Super Fast Rectifiers
Reverse Voltage 50 to 600V Forward Current 2.0A
FEATURES
* Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* High temperature metallurgically
bonded construction
* For use in high frequency rectifier circuits
* Fast switching for high efficiency
* Cavity-free glass passivated junction
* Capable of meeting environmental standards
of MIL-S-19500
* 2.0 A operation at TC=75°C with no thermal runaway
* Typical IR less than 1.0µA
* High temperature soldering guaranteed:
260°C/10 seconds
Mechanical Data
Case:
JEDEC SMB-FL molded plastic over glass Die
Terminals:
Plated leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position
Any
:
Weight:
0.066 g
Handling precautin
:None
we declare that the material of product is halogen
free (green epoxy compound).
Electrical Characteristic
1.Maximum & Thermal Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
= 75°C
V
RRM
V
RMS
V
DC
IF(AV)
symbol
EFMB EFMB EFMB EFMB EFMB EFMB EFMB EFMB
F201 F202 F203 F204 F205 F206 F207 F208
EF201
EF202
EF203
EF204
EF205
EF206
EF207
EF208
Unit
50
35
50
100
70
100
150
105
150
200
140
200
2.0
50
300
210
300
400
280
400
500
350
500
600
420
600
V
V
V
A
A
°C/W
°C
Peak forward surge current 8.3ms single half sine-wave
I
FSM
superimposed on rated load (JEDEC Method)
Typical thermal resistance (Note 1)
Operating junction and storage temperature range
RθJA
RθJC
TJ, TSTG
135
25
–50 to +150
Electrical Characteristics Ratings
at 25°C ambient temperature unless otherwise specified.
Parameter Symbol
Maximum instantaneous forward voltage at 2.0A
Maximum DC reverse current TA = 25°C
at rated DC blocking voltage TJ = 125°C
Typical reverse recovery time (Note 1)
Typical junction capacitance at 4.0V, 1MHz
NOTES:
1. IF = 0.5A, IR = 1.0A, IRR = 0.25A
2. 8.0mm2 (.013mm thick) land areas
symbol
V
F
IR
trr
CJ
EFMB EFMB EFMB EFMB EFMB EFMB EFMB EFMB
F201 F202 F203 F204 F205 F206 F207 F208
0.95
1.25
1.7
5.0
100
35
15.0
Unit
V
µA
ns
PF

EFMBF204 Related Products

EFMBF204 EFMBF208
Description DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV @ 2A Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 600V Average rectified current (Io): 2A Forward voltage drop (Vf): 1.7V @ 2A Reverse recovery time (trr): 35ns
DC reverse withstand voltage (Vr) 200V 600V
Average rectified current (Io) 2A 2A
Forward voltage drop (Vf) 950mV @ 2A 1.7V @ 2A
Reverse recovery time (trr) 35ns 35ns

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