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PSD813F4V-15J

Description
256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52
CategoryThe embedded processor and controller    Microcontrollers and processors   
File Size651KB,95 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

PSD813F4V-15J Overview

256K X 8 FLASH, 27 I/O, PIA-GENERAL PURPOSE, PQFP52

PSD813F4V-15J Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeLCC
package instructionPLASTIC, LCC-52
Contacts52
Reach Compliance Codecompli
ECCN codeEAR99
Maximum access time1.5e-7 ns
JESD-30 codeS-PQCC-J52
JESD-609 codee3
length19.1 mm
Number of I/O lines27
Number of ports4
Number of terminals52
Maximum operating temperature70 °C
Minimum operating temperature
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Encapsulate equivalent codeLDCC52,.8SQ
Package shapeSQUARE
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)245
power supply3.3 V
Certification statusNot Qualified
ROM size (bits)1310720 Bits
Maximum seat height4.57 mm
Maximum standby current0.0001 A
Maximum supply voltage3.6 V
Minimum supply voltage3 V
Nominal supply voltage3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceMatte Tin (Sn)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
UV erasableN
width19.1 mm
uPs/uCs/peripheral integrated circuit typePARALLEL IO PORT, GENERAL PURPOSE
PSD834F2V
Flash PSD, 3.3V Supply, for 8-bit MCUs
2 Mbit + 256 Kbit Dual Flash Memories and 64 Kbit SRAM
PRELIMINARY DATA
FEATURES SUMMARY
s
FLASH IN-SYSTEM PROGRAMMABLE (ISP)
PERIPHERAL FOR 8-BIT MCUs
s
3.3 V±10% SINGLE SUPPLY VOLTAGE
s
2 MBIT OF PRIMARY FLASH MEMORY (8
UNIFORM SECTORS, 32K x 8)
s
256 KBIT SECONDARY FLASH MEMORY (4
UNIFORM SECTORS)
s
64 KBIT OF BATTERY-BACKED SRAM
s
OVER 3,000 GATES OF PLD: DPLD and CPLD
s
27 RECONFIGURABLE I/O PORTS
s
ENHANCED JTAG SERIAL PORT
s
PROGRAMMABLE POWER MANAGEMENT
s
HIGH ENDURANCE:
– 100,000 Erase/WRITE Cycles of Flash
Memory
– 1,000 Erase/WRITE Cycles of PLD
Figure 1. Packages
PQFP52 (M)
PLCC52 (J)
November 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
Rev. 2.0
1/95
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