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SR5100L

Description
DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 5A Forward voltage drop (Vf): 800mV @ 5A VR=100V IO=5A VF=0.8V@5A
CategoryDiscrete semiconductor    Schottky diode   
File Size118KB,2 Pages
ManufacturerMOSPEC
Websitehttp://www.mospec.com.tw/eng/index.html
Download Datasheet Parametric View All

SR5100L Overview

DC reverse withstand voltage (Vr): 100V Average rectified current (Io): 5A Forward voltage drop (Vf): 800mV @ 5A VR=100V IO=5A VF=0.8V@5A

SR5100L Parametric

Parameter NameAttribute value
DC reverse withstand voltage (Vr)100V
Average rectified current (Io)5A
Forward voltage drop (Vf)800mV @ 5A
MOSPEC
Schottky Barrier Rectifiers
Using the Schottky Barrier principle with a Refractory metal capable of high
temperature operation metal.
The proprietary barrier technology allows for
reliable operation up to 175℃ junction temperature. Typical application are in
switching Mode Power Supplies such as adaptors, DC/DC converters, free-
wheeling and polarity protection diodes.
Features
*Low
Forward Voltage.
*Low
Switching noise.
*High
Current Capacity
*Guarantee
Reverse Avalanche.
*Guard-Ring
for Stress Protection.
*Low
Power Loss & High efficiency.
*150℃
Operating Junction Temperature
*Low
Stored Charge Majority Carrier Conduction.
*Plastic
Material used Carries Underwriters Laboratory
Flammability Classification 94V-O
*Moisture
Sensitivity Level: MSL-1
SR5100L
SCHOTTKY BARRIER
RECTIFIERS
5 AMPERES
100 VOLTS
DO-201AD
*In
compliance with EU RoHs 2002/95/EC directives
MAXIMUM RATINGS
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectifier Forward Current
Non-Repetitive Peak Surge Current (Surge applied at
rate load conditions halfware, single phase, 60Hz)
Operating and Storage Junction Temperature Range
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
T
J
, T
stg
SR5100L
100
70
5
150
-65 to +150
Unit
V
V
A
A
MILLIMETERS
MIN
5.00
25.40
8.50
1.20
MAX
5.60
---
9.50
1.30
THERMAL RESISTANCES
Typical Thermal Resistance junction from Junction
to
ambient
R
θj-A
7.5
℃/w
DIM
A
B
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage
( I
F
=0.1 Amp T
C
= 25℃)
( I
F
=2.5 Amp T
C
= 25℃)
( I
F
=5.0 Amp T
C
= 25℃)
Maximum Instantaneous Reverse Current
( Rated DC Voltage, T
C
= 25℃)
( Rated DC Voltage, T
C
= 125℃)
Typical Junction Capacitance
(Reverse Voltage of 4 volts & f=1 MHz)
V
F
---
---
---
---
---
0.29
0.62
0.80
0.35
0.71
0.85
V
Symbol
Min.
Typ. Max.
Unit
C
D
CASE---
Transfer molded
plastic
POLARITY---
Cathode indicated
polarity band
I
R
0.08 0.1
15 30
380
mA
C
P
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