NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804ND5G
TO-252-5
Halogen-Free & Lead-Free
PRODUCT SUMMARY
D1
G1
G2
D2
N-Channel
P-Channel
40V
-40V
28mΩ
48mΩ
21A
-16A
S1
S2
S2 G2
G : GATE
D : DRAIN
S : SOURCE
V
(BR)DSS
R
DS(ON)
I
D
D1/D2
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
1
SYMBOL
V
DS
V
GS
N-Channel P-Channel
40
±20
21
13
50
26
33
21
8
-55 to 150
-40
±20
-16
-10
-50
-26
33
S1G1
UNITS
V
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AS
A
L=0.1mH
T
C
= 25 °C
T
C
= 100 °C
E
AS
P
D
T
j
, T
stg
mJ
W
°C
SYMBOL
R
θJC
R
θJA
TYPICAL
MAXIMUM
6
40
UNITS
°C / W
°C / W
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
J
= 25
°C,
Unless Otherwise Noted)
LIMITS
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
V
GS
= 0V, I
D
= 250µA
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0V, I
D
= -250µA
V
DS
= V
GS
, I
D
= 250µA
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250µA
V
DS
= 0V, V
GS
= ±20V
Gate-Body Leakage
I
GSS
V
DS
= 0V, V
GS
= ±20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
40
-40
1
-1
2
-2
3
-3
±100
±100
V
MIN
TYP MAX
UNIT
nA
REV 1.0
1
Nov-04-2010
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804ND5G
TO-252-5
Halogen-Free & Lead-Free
V
DS
= 32V, V
GS
= 0V
V
DS
= -32V, V
GS
= 0V
Zero Gate Voltage Drain Current
I
DSS
N-Ch
P-Ch
1
-1
µA
10
-10
V
DS
= 30V, V
GS
= 0V, T
J
= 55 °C N-Ch
V
DS
= -30V, V
GS
= 0V, T
J
= 55 °C
P-Ch
On-State Drain Current
1
I
D(ON)
V
DS
= 5V, V
GS
= 10V
V
DS
=-5V, V
GS
= -10V
V
GS
= 5V, I
D
= 6A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
50
-50
35
65
18
33
16
11
49
85
A
Drain-Source On-State Resistance
1
V
GS
= -5V, I
D
= -4.5A
R
DS(ON)
V
GS
= 10V, I
D
= 7A
V
GS
= -10V, I
D
= -5.5A
mΩ
28
48
Forward Transconductance
1
g
fs
V
DS
= 10V, I
D
= 7A
V
DS
= -10V, I
D
= -5.5A
S
DYNAMIC
Input Capacitance
C
iss
N-Ch
N-Channel
V
GS
= 0V, V
DS
= 20V, f = 1MHz
P-Channel
P-Ch
N-Ch
P-Ch
797
856
180
191
132
128
17
18
4
4
5
6
nC
pF
Output Capacitance
C
oss
Reverse Transfer Capacitance
2
C
rss
V
GS
= 0V, V
DS
= -20V, f = 1MHz N-Ch
P-Ch
N-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 7A
P-Channel
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -5.5A
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Total Gate Charge
Q
g
2
Gate-Source Charge
2
Q
gs
Gate-Drain Charge
Q
gd
REV 1.0
2
Nov-04-2010
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804ND5G
TO-252-5
Halogen-Free & Lead-Free
Turn-On Delay Time
2
2
t
d(on)
N-Channel
V
DS
= 20V
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
10
10
15
10
20
25
10
5
nS
Rise Time
t
r
I
D
≅
1A, V
GS
= 10V, R
GEN
= 6Ω
2
Turn-Off Delay Time
t
d(off)
P-Channel
V
DS
= -20V
Fall Time
2
t
f
I
D
≅
-1A, V
GS
= -10V, R
GEN
= 6Ω
N-Ch
P-Ch
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25
°C)
Forward Voltage
1
I
F
= 7A, V
GS
= 0V
V
SD
I
F
= -5.5A, V
GS
= 0V
N-Ch
P-Ch
N-Ch
P-Ch
1
-1
21
-16
25
35
35
40
V
Continuous Current
I
S
A
I
F
= 7A, dl
F
/dt = 100A /
µS
Reverse Recovery Time
t
rr
I
F
= -5.5A, dl
F
/dt = 100A /
µS
Reverse Recovery Charge
1
2
N-Ch
P-Ch
N-Ch
P-Ch
nS
Q
rr
nC
Pulse test : Pulse Width
≤
300
µsec,
Duty Cycle
≤
2%.
Independent of operating temperature.
REV 1.0
3
Nov-04-2010
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804ND5G
TO-252-5
Halogen-Free & Lead-Free
TYPICAL PERFORMANCE CHARACTERISTICS
N-CHANNEL
Output Characteristics
I
D
, Drain-To-Source Current(A)
30
25
V
GS
=4V
V
G S
= 1 0 V V
G S
= 4 .5 V
30
Transfer Characteristics
I
D
, Drain-To-Source Current(A)
25
20
20
15
15
T
J
= 1 2 5 ° C
10
T
J
= 2 5 ° C
5
T
J
= -2 0 ° C
10
5
V
GS
= 3V
0
0
1
2
3
4
5
0
1 .0
1 .5
2 .0
2 .5
3 .0
3 .5
4 .0
4 .5
5 .0
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
On-Resistance VS Temperature
R
DS(ON)
╳
1.8
Capacitance Characteristic
1.00E+03
R
DS(ON)
ON-Resistance(OHM)
C , Capacitance(pF)
R
DS(ON)
╳
1.6
8.00E+02
Ciss
R
DS(ON)
╳
1.4
6.00E+02
R
DS(ON)
╳
1.2
4.00E+02
R
DS(ON)
╳
1.0
R
DS(ON)
╳
0.8
V
GS
=10V
I
D
=7A
2.00E+02
Coss
Crss
R
DS(ON)
╳
0.6
-50
-25
0
25
50
75
100
125
150
0.00E+00
0
5
10
15
20
25
30
T
J
, Junction Temperature(˚C)
80
V
DS
, Drain-To-Source Voltage(V)
On-Resistance VS Drain Current
R
DS(ON)
ON-Resistance(mOHM)
On-Resistance VS Gate-To-Source
100
R
DS(ON)
ON-Resistance( mOHM)
70
60
50
40
30
20
10
0
0
5
10
15
20
25
80
60
V
GS
= 4.5V
V
GS
= 10V
40
20
0
0
I
D
= 7A
2
4
6
8
V
GS
, Gate-To-Source Voltage(V)
10
I
D
, Drain-To-Source Current(A)
REV 1.0
4
Nov-04-2010
NIKO-SEM
N- & P-Channel Enhancement Mode
Field Effect Transistor
P2804ND5G
TO-252-5
Halogen-Free & Lead-Free
10
Gate charge Characteristics
Source-Drain Diode Forward Voltage
1.0E+03
1.0E+02
V
GS
, Gate-To-Source Voltage(V)
I
D
=7A
V
DS
=20V
I
S
, Source Current(A)
8
1.0E+01
T
J
=150° C
1.0E+00
T
J
=25° C
1.0E-01
1.0E-02
1.0E-03
6
4
2
0
0
4
8
12
16
20
1.0E-04
0.0
0.2
0.4
0.6
0.8
1.0
1.2
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
100
Operation in This
Area is Lim ited by
R
DS(ON)
Single Pulse Maximum Power Dissipation
1000
I
D
, Drain Current(A)
10
↓
800
100us
SINGLE PULSE
R
θJC
= 6˚ C/W
˚
T
C
=25
˚
C
1m s
1
NOTE :
1.V
GS
= 10V
2.T
C
=25˚ C
˚
3.R
θJC
= 6˚ C/W
˚
4.Single Pulse
0.1
0.1
1
10
100
10m s
DC
Power(W)
600
400
200
0
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
1.00E+01
Transient Thermal Resistance
r(t) , Normalized Effective
1.00E+00
Duty Cycle =0.5
0.1
0.2
0.05
Note
1.00E-01
0.01
0.02
single Pluse
1.Duty cycle, D= t1 / t2
o
2.Rth
JC
= 6 C/W
3.T
J
-T
C
= P*Rth
JC
(t)
4.Rth
JC
(t) = r(t)*Rth
JC
1.00E-02
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
T
1
, Square Wave Pulse Duration[sec]
REV 1.0
5
Nov-04-2010
京公网安备 11010802033920号
EEWORLD
