P06P03LDG datasheet, PDF - EEWORLD Datasheet

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P06P03LDG: DescriptionDrain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 75mΩ @ 10A, 4.5V Maximum power consumption Dispersed (Ta=25°C): 48W (Tc) Type: P channel P channel -30V -12A; CategoryDiscrete semiconductor MOS (field effect tube); File Size470KB，5 Pages; ManufacturerNIKO-SEM; Websitehttp://www.niko-sem.com/

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P06P03LDG Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 12A (Tc) Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 75mΩ @ 10A, 4.5V Maximum power consumption Dispersed (Ta=25°C): 48W (Tc) Type: P channel P channel -30V -12A

P06P03LDG Parametric

Parameter Name	Attribute value
Drain-source voltage (Vdss)	30V
Continuous drain current (Id) at 25°C	12A(Tc)
Gate-source threshold voltage	3V @ 250uA
Drain-source on-resistance	75mΩ @ 10A,4.5V
Maximum power dissipation (Ta=25°C)	48W(Tc)
type	P channel

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P06P03LDG

P-Channel Enhancement Mode MOSFET

PRODUCT SUMMARY

(BR)DSS

-30V

DS(ON)

45mΩ @V

= -10V

-12A

TO-252

ABSOLUTE MAXIMUM RATINGS (T

= 25 ° Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

Avalanche Current

Avalanche Energy

Power Dissipation

SYMBOL

LIMITS

-30

±20

-12

-10

-30

-29

-55 to 150

UNITS

= 25 °

= 100 °

L = 0.1mH

= 25 °

= 100 °

, T

STG

Operating Junction & Storage Temperature Range

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE

Junction-to-Case

Junction-to-Ambient

SYMBOL

qJC

qJA

TYPICAL

MAXIMUM

UNITS

° /W

Pulse width limited by maximum junction temperature.

Ver 1.1

2013-3-13

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