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PM560BZ

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 108mΩ @ 2A, 4.5V Maximum power dissipation (Ta =25°C): 800mW Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size705KB,8 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

PM560BZ Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 3A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 108mΩ @ 2A, 4.5V Maximum power dissipation (Ta =25°C): 800mW Type: N-channel

PM560BZ Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C3A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance108mΩ @ 2A,4.5V
Maximum power dissipation (Ta=25°C)800mW
typeN channel
PM560BZ
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
60V
R
DS(ON)
88mΩ @V
GS
= 10V
I
D
3A
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °
C
T
A
= 70 °
C
T
C
= 25 °
C
T
C
= 70 °
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
j
, T
stg
LIMITS
60
±20
3
1.9
12
0.8
0.5
-55 to 150
W
°
C
A
UNITS
V
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
1
2
SYMBOL
R
qJA
TYPICAL
MAXIMUM
144
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°
C.
REV 1.1
1
2015/8/19
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