NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKC26BB
PDFN 5x6P
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
1.6mΩ
I
D4
151A
D
G
Features
• Pb−Free, Halogen Free and RoHS compliant.
• Low R
DS(on)
to Minimize Conduction Losses.
• Ohmic Region Good R
DS(on)
Ratio.
• Optimized Gate Charge to Minimize Switching Losses.
Applications
• Protection Circuits Applications.
• Computer for DC to DC Converters Applications.
#1 S
S S
G
S
D
D
D
D
G. GATE
D. DRAIN
S. SOURCE
100% UIS Tested
100% Rg Tested
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
4
Pulsed Drain Current
1
Continuous Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Power Dissipation
3
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
D
I
AS
E
AS
P
D
P
D
T
j
, T
stg
LIMITS
30
±20
151
95
200
36
28
57
162
73
29
4.1
2.6
-55 to 150
mJ
W
W
°C
A
UNITS
V
V
Operating Junction & Storage Temperature Range
REV 1.0
1
G-48-2
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKC26BB
PDFN 5x6P
Halogen-Free & Lead-Free
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
2
Junction-to-Ambient
2
Junction-to-Case
1
2
SYMBOL
R
JA
R
JA
R
JC
TYPICAL
MAXIMUM
30
50
1.7
UNITS
t
≦10s
Steady-State
Steady-State
°C / W
Pulse width limited by maximum junction temperature.
The value of R
θJA
is measured with the device mounted on 1in
2
FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
The Power dissipation is based on R
JA
t
≦10s
value.
4
The maximum current rating is package limited.
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
Forward Transconductance
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
R
DS(ON)
g
fs
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 55 °C
V
GS
= 4.5V, I
D
= 20A
V
GS
= 10V, I
D
= 20A
V
DS
= 5V, I
D
= 20A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Q
g
C
iss
C
oss
C
rss
R
g
V
GS
= 10V
V
GS
= 4.5V
LIMITS
UNIT
MIN TYP MAX
30
1.3
1.6
2.35
±100
1
10
1.6
1.1
123
2.3
1.6
V
nA
A
mΩ
S
3499
V
GS
= 0V, V
DS
= 15V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
625
408
1.1
70
V
DS
= 15V , V
GS
= 10V,
I
D
= 20A
36
9.2
17
20
V
DS
= 15V ,
I
D
20A, V
GS
= 10V, R
GEN
=6Ω
120
97
150
nS
nC
Ω
pF
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
REV 1.0
2
G-48-2
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKC26BB
PDFN 5x6P
Halogen-Free & Lead-Free
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
Continuous Current
3
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
I
S
V
SD
t
rr
Q
rr
I
F
= 20A, V
GS
= 0V
I
F
= 20A, dl
F
/dt = 100A /
S
28
13
73
1
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
3
The maximum current rating is package limited.
REV 1.0
3
G-48-2
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKC26BB
PDFN 5x6P
Halogen-Free & Lead-Free
30
Output Characteristics
VGS=2.7V
VGS=10V
VGS=9V
VGS=8V
VGS=7V
VGS=6V
VGS=5V
VGS=4.5V
VGS=3V
VGS=2.5V
30
Transfer Characteristics
I
D
, Drain-To-Source Current(A)
I
D
, Drain-To-Source Current(A)
24
24
18
18
12
12
25℃
6
6
125℃
-20℃
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
On-Resistance VS Gate-To-Source
0.008
ID=20A
On-Resistance VS Drain Current
0.004
R
DS(ON)
ON-Resistance(OHM)
R
DS(ON)
ON-Resistance(OHM)
0.0032
0.006
0.0024
0.004
VGS=4.5V
0.0016
0.002
0.0008
VGS=10V
0
2
4
6
8
10
0
0
6
12
18
24
30
V
GS
, Gate-To-Source Voltage(V)
I
D
, Drain-To-Source Current(A)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
On-Resistance VS Temperature
4500
4000
3500
Capacitance Characteristic
Normalized Drain to Source
ON-Resistance
CISS
C , Capacitance(pF)
3000
2500
2000
1500
1000
500
0
0
5
10
15
20
25
30
COSS
CRSS
VGS=10V
ID=20A
-50
-25
0
25
50
75
100
125
150
T
J
, Junction Temperature(˚C)
V
DS
, Drain-To-Source Voltage(V)
REV 1.0
4
G-48-2
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PKC26BB
PDFN 5x6P
Halogen-Free & Lead-Free
10
Gate charge Characteristics
VDS=15V
ID=20A
Source-Drain Diode Forward Voltage
1000
V
GS
, Gate-To-Source Voltage(V)
8
100
6
I
S
, Source Current(A)
10
4
150℃
1
25℃
2
0
0
20
40
60
80
100
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
1000
Operation in This
Area is Limited by
RDS(ON)
100
Single Pulse Maximum Power Dissipation
150
Single Pulse
RθJA = 50
˚C/W
TA = 25˚C
120
I
D
, Drain Current(A)
Power(W)
10
1ms
1
10ms
100ms
NOTE :
1.VGS = 10V
2.TA = 25˚C
3.RθJA = 50
˚C/W
4.Single Pulse
90
60
0.1
DC
30
0.01
0.01
0.1
1
10
100
0
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
1
Duty cycle=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
0.0001
0.001
0.01
0.1
1
10
100
1.Duty cycle, D= t1 / t2
2.RthJA = 50
℃/W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
Notes
T
1
, Square Wave Pulse Duration[sec]
REV 1.0
5
G-48-2
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