NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1010AT
TO-220
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
100V
R
DS(ON)
10.5mΩ
I
D
69A
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
L = 1mH
T
C
= 25 ° C
T
C
= 100 ° C
Operating Junction & Storage Temperature Range
1
SYMBOL
V
DS
V
GS
LIMITS
100
±25
69
49
200
23
264
115
58
-55 to 175
UNITS
V
V
T
C
= 25 ° C
T
C
= 100 ° C
I
D
I
DM
I
AS
E
AS
P
D
T
j
, T
stg
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
1.3
50
UNITS
°C / W
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±25V
V
DS
= 80V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 125 ° C
100
2.5
3.5
4.5
±100
1
10
nA
A
V
LIMITS
UNITS
MIN TYP MAX
REV 1.1
1
G-32-3
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1010AT
TO-220
Halogen-Free & Lead-Free
8.2
9.9
57
10.5
13.5
S
Drain-Source On-State
1
Resistance
Forward Transconductance
1
R
DS(ON)
g
fs
V
GS
= 10V, I
D
= 20A
V
GS
= 7V, I
D
= 20A
V
DS
= 5V, I
D
= 20A
DYNAMIC
mΩ
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
C
iss
C
oss
C
rss
Rg
V
GS
= 10V
4863
V
GS
= 0V, V
DS
= 25V, f = 1MHz
375
297
V
GS
= 0V, V
DS
= 0V, f = 1MHz
0.8
101
V
DS
=50V,I
D
= 20A
76
28
39
41
V
DD
= 50V,
I
D
20A, V
GS
= 10V, R
GEN
=6Ω
99
93
64
nS
nC
Ω
pF
Q
g
V
GS
= 7V
Gate-Source Charge
Gate-Drain Charge
2
2
2
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
2
2
t
d(on)
t
r
Turn-Off Delay Time
Fall Time
2
t
d(off)
t
f
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °C)
Continuous Current
Forward Voltage
1
3
I
S
V
SD
t
rr
Q
rr
I
F
= 20A , V
GS
= 0V
I
F
= 20A , dI
F
/dt= 100A/μs
46
69
63
1.2
A
V
nS
nC
Reverse Recovery Time
Reverse Recovery Charge
1
2
Pulse test : Pulse Width
300
sec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.1
2
G-32-3
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1010AT
TO-220
Halogen-Free & Lead-Free
Output Characteristics
30
VGS=6V
30
Transfer Characteristics
I
D
, Drain-To-Source Current(A)
I
D
, Drain-To-Source Current(A)
24
VGS=10V
VGS=9V
VGS=8V
VGS=7V
24
VGS=5.7V
18
18
25℃
12
12
VGS=5.5V
125℃
6
-20℃
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
6
7
V
DS
, Drain-To-Source Voltage(V)
V
GS
, Gate-To-Source Voltage(V)
0.1
On-Resistance VS Gate-To-Source
Voltage
R
DS(ON)
ON-Resistance(OHM)
On-Resistance VS Drain Current
0.03
R
DS(ON)
ON-Resistance(OHM)
0.08
0.024
0.06
0.018
0.04
0.012
VGS=7V
0.02
ID=20A
0
2
4
6
8
10
0.006
VGS=10V
0
0
6
12
18
24
30
V
GS
, Gate-To-Source Voltage(V)
I
D
, Drain-To-Source Current(A)
On-Resistance VS Temperature
3.0
6000
Capacitance Characteristic
Normalized Drain to Source
ON-Resistance
2.5
5000
CISS
C , Capacitance(pF)
VGS=10V
ID=20A
2.0
4000
1.5
3000
1.0
2000
0.5
1000
COSS
CRSS
0.0
-50
-25
0
25
50
75
100
125
150
0
0
5
10
15
20
25
30
T
J
, Junction Temperature(˚C)
V
DS
, Drain-To-Source Voltage(V)
REV 1.1
3
G-32-3
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1010AT
TO-220
Halogen-Free & Lead-Free
10
Gate charge Characteristics
Characteristics
VDS=50V
ID=20A
Source-Drain Diode Forward Voltage
100
V
GS
, Gate-To-Source Voltage(V)
8
I
S
, Source Current(A)
10
6
4
150℃
1
25℃
2
0
0
22
44
66
88
110
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Qg , Total Gate Charge(nC)
V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
1000
Operation in This Area
is Limited by RDS(ON)
Single Pulse Maximum Power Dissipation
1000
Single Pulse
RθJC = 1.3˚C/W
TC=25˚C
800
I
D
, Drain Current(A)
100
Power(W)
600
10
1ms
10ms
100ms
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1.3˚C/W
4.Single Pulse
400
1
DC
200
0.1
0.1
1
10
100
1000
0
0.001
0.01
0.1
1
10
100
V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
1
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
Notes
0.1
single pulse
1.Duty cycle, D= t1 / t2
2.RthJC = 1.3
℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
REV 1.1
4
G-32-3
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