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P1825HDB

Description
Drain-source voltage (Vdss): 250V Continuous drain current (Id) (at 25°C): 18A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 230mΩ @ 9A, 10V Maximum power dissipation (Ta= 25°C): 74W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size156KB,4 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

P1825HDB Overview

Drain-source voltage (Vdss): 250V Continuous drain current (Id) (at 25°C): 18A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 230mΩ @ 9A, 10V Maximum power dissipation (Ta= 25°C): 74W Type: N-channel

P1825HDB Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)250V
Continuous drain current (Id) at 25°C18A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance230mΩ @ 9A,10V
Maximum power dissipation (Ta=25°C)74W
typeN channel
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
P1825HDB
TO-252
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
250V
R
DS(ON)
230mΩ
I
D
18A
G
S
1: GATE
2: DRAIN
3: SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1
1
SYMBOL
V
DS
V
GS
LIMITS
250
±20
18
11
51
9
40
74
29
UNITS
V
V
T
C
= 25 ° C
T
C
= 100 ° C
I
D
I
DM
I
AS
A
L = 1mH
T
C
= 25 ° C
T
C
= 100 ° C
E
AS
P
D
T
J
, T
stg
mJ
W
°C
-55 to 150
SYMBOL
R
JA
R
JC
TYPICAL
MAXIMUM
62.5
UNITS
°C / W
1.7
Pulse width limited by maximum junction temperature.
.ELECTRICAL
CHARACTERISTICS (T
J
= 25
°
C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
1
Resistance
REV 1.0
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 250V, V
GS
= 0V
V
DS
= 200V, V
GS
= 0V, T
J
= 125 ° C
V
GS
= 4.5V, I
D
= 9A
R
DS(ON)
1
V
GS
=10V, I
D
= 9A
210
193
250
1
2
3
±100
1
10
286
230
nA
A
V
LIMITS
UNIT
MIN TYP MAX
G-5-6
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