P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
-100V
R
DS(ON)
60mΩ @V
GS
= -10V
I
D
-20A
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
1
SYMBOL
V
DS
V
GS
LIMITS
-100
±20
-20
-12
-60
-54
149
50
20
-55 to 150
UNITS
V
T
C
= 25 °
C
T
C
= 100 °
C
I
D
I
DM
I
AS
A
L = 0.1mH
T
C
= 25 °
C
T
C
= 100 °
C
E
AS
P
D
T
J
, T
STG
mJ
W
°
C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
SYMBOL
R
qJC
R
qJA
TYPICAL
MAXIMUM
2.5
75
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
REV 1.2
1
2014/5/26
P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
LIMITS
MIN
-100
-1.5
-2.7
-4
±250
-1
-10
-60
53
51
35
4960
72
60
TYP
MAX
UNIT
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, I
D
= -250mA
V
DS
= V
GS
, I
D
= -250mA
V
DS
= 0V, V
GS
= ±20V
V
DS
= -80V, V
GS
= 0V
V
DS
= -80V, V
GS
= 0V , T
J
= 125 °
C
V
DS
= -5V, V
GS
= -10V
V
GS
= -7V, I
D
= -18A
V
GS
= -10V, I
D
= -20A
V
DS
= -5V, I
D
= -20A
DYNAMIC
V
GS
= 0V, V
DS
= -25V, f = 1MHz
V
GS
= 0V, V
DS
= 0V, f = 1MHz
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -20A
V
nA
mA
A
mΩ
S
224
167
4.6
90
19
24
20
25
120
pF
Ω
nC
V
DS
= -20V,
I
D
@
-1A, V
GS
= -10V, R
GS
= 6Ω
nS
125
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °
C)
I
S
V
SD
t
rr
Q
rr
I
F
= -20A, V
GS
= 0V
I
F
= -20A, dl
F
/dt = 100A /
mS
84.3
256
-20
-1.3
A
V
nS
nC
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
REV 1.2
2
2014/5/26
P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
REV 1.2
3
2014/5/26
P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
REV 1.2
4
2014/5/26
P6010DDG
P-Channel Logic Level Enhancement Mode MOSFET
*因为各家封装模具不同而外观略有所差异，不½响电性及Layout。
REV 1.2
5
2014/5/26
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