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PD632BA

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 105A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 3.7mΩ @ 40A, 10V Maximum power dissipation ( Ta=25°C): 73W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size209KB,4 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

PD632BA Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 105A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 3.7mΩ @ 40A, 10V Maximum power dissipation ( Ta=25°C): 73W Type: N-channel

PD632BA Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C105A
Gate-source threshold voltage2.3V @ 250uA
Drain-source on-resistance3.7mΩ @ 40A,10V
Maximum power dissipation (Ta=25°C)73W
typeN channel
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PD632BA
TO-252
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
3.7mΩ
I
D
105A
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Power Dissipation
Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
2
2
SYMBOL
V
DS
V
GS
LIMITS
30
±20
105
66
200
40
80
73
29
UNITS
V
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
I
AS
A
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
E
AS
P
D
T
J
, T
stg
mJ
W
°C
-55 to 150
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
1.7
UNITS
°C / W
62.5
Pulse width limited by maximum junction temperature.
Package limitation current is 55A
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State
Resistance
1
REV1.1
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
DS
= 0V, V
GS
= ±20V
V
DS
= 24V, V
GS
= 0V
V
DS
= 20V, V
GS
= 0V, T
J
= 125 °C
V
GS
= 4.5V, I
D
= 30A
V
GS
= 10V , I
D
= 40A
3.4
2.8
30
V
1.3
1.7
2.3
±100
1
10
4.8
3.7
nA
A
LIMITS
UNIT
MIN TYP MAX
R
DS(ON)
G-36-5

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