NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PD537BA
TO-252
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
-30V
R
DS(ON)
8mΩ
I
D
-71A
D
G
S
1. GATE
2. DRAIN
3. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
2
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Power Dissipation
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
Junction & Storage Temperature Range
T
J
, T
stg
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
I
AS
E
AS
P
D
LIMITS
-30
±25
-71
-45
-160
-36
64.8
73
29
-55 to 150
mJ
W
°C
A
UNITS
V
V
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
2
SYMBOL
R
JC
R
JA
TYPICAL
MAXIMUM
1.7
62.5
UNITS
°C / W
Pulse width limited by maximum junction temperature.
Package limitation current is -55A.
ELECTRICAL CHARACTERISTICS (T
J
= 25
°C,
Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0V, I
D
= -250A
V
DS
= V
GS
, I
D
= -250A
V
DS
= 0V, V
GS
= ±25V
V
DS
= -24V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V, T
J
= 125 °C
-30
-1
-1.6
-3
±100
-1
-10
nA
A
V
LIMITS
UNIT
MIN TYP MAX
REV 1.0
1
F-9-03
NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PD537BA
TO-252
Halogen-Free & Lead-Free
6.5
9.6
49
8
14
mΩ
S
Drain-Source On-State
Resistance
1
Forward Transconductance
1
R
DS(ON)
g
fs
V
GS
= -10V, I
D
= -20A
V
GS
= -4.5V, I
D
= -20A
V
DS
= -5V, I
D
= -20A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
C
iss
C
oss
C
rss
R
g
Q
g
(V
GS
=-10V)
Q
g
(V
GS
=-4.5V)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= -15V ,
I
D
-20A, V
GS
= -10V, R
GEN
=6Ω
V
DS
= -15V , I
D
= -20A
V
GS
=0V, V
DS
= 0V, f = 1MHz
V
GS
= 0V, V
DS
= -15V, f = 1MHz
2464
374
271
3.8
55
27
8.3
11
15
20
41
23
nS
nC
Ω
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25
°C)
Continuous Current
3
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
I
S
V
SD
t
rr
Q
rr
I
F
= -20A, V
GS
= 0V
I
F
= -20A, dl
F
/dt = 100A /
S
26
13
-56
-1.3
A
V
nS
nC
Pulse test : Pulse Width
300
sec,
Duty Cycle
2%.
Independent of operating temperature.
3
Package limitation current is -55A.
REV 1.0
2
F-9-03
NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PD537BA
TO-252
Halogen-Free & Lead-Free
Output Characteristics
30
30
Transfer Characteristics
-I
D
, Drain-To-Source Current(A)
-I
D
, Drain-To-Source Current(A)
VGS=-3V
24
24
18
12
VGS=-10V
VGS=-9V
VGS=-8V
VGS=-7V
VGS=-6V
VGS=-5V
VGS=-4.5V
VGS=-2.5V
18
12
25℃
6
125℃
-20℃
6
0
0
1
2
3
4
5
6
0
0
1
2
3
4
5
-V
DS
, Drain-To-Source Voltage(V)
-V
GS
, Gate-To-Source Voltage(V)
Gate charge Characteristics
10
3000
VDS=-15V
ID=-20A
Capacitance Characteristic
-V
GS
, Gate-To-Source Voltage(V)
C , Capacitance(pF)
8
2500
CISS
2000
6
1500
4
1000
COSS
500
CRSS
2
0
0
10
0
Qg , Total Gate Charge(nC)
20
30
40
50
60
0
-V
DS
, Drain-To-Source Voltage(V)
5
10
15
20
25
On-Resistance VS Gate-To-Source
0.05
0.015
On-Resistance VS Drain Current
R
DS(ON)
ON-Resistance(OHM)
0.04
R
DS(ON)
ON-Resistance(OHM)
0.012
VGS=-4.5V
0.009
0.03
0.02
0.006
VGS=-10V
0.003
0.01
ID=-20A
0
2
4
6
8
10
0
0
6
12
18
24
30
-V
GS
, Gate-To-Source Voltage(V)
-I
D
, Drain-To-Source Current(A)
REV 1.0
3
F-9-03
NIKO-SEM
P-Channel Enhancement Mode
Field Effect Transistor
PD537BA
TO-252
Halogen-Free & Lead-Free
On-Resistance VS Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25
50
75
100
125
150
VGS=-10V
ID=-20A
100
Source-Drain Diode Forward Voltage
Normalized Drain to Source
ON-Resistance
-I
S
, Source Current(A)
10
125℃
1
25℃
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature(˚C)
-V
SD
, Source-To-Drain Voltage(V)
Safe Operating Area
1000
Operation in This
Area is Limited by
RDS(ON)
Single Pulse Maximum Power Dissipation
1000
Single Pulse
RθJC = 1.7
˚C/W
TC=25˚C
800
-I
D
, Drain Current(A)
Power(W)
100
100
600
1ms
10
NOTE :
1.VGS= 10V
2.TC=25˚C
3.RθJC = 1.7
˚C/W
4.Single Pulse
1
0.1
1
10
10ms
100ms
DC
400
200
0
0.001
0.01
0.1
1
10
100
-V
DS
, Drain-To-Source Voltage(V)
Single Pulse Time(s)
Transient Thermal Response Curve
10
Transient Thermal Resistance
r(t) , Normalized Effective
Duty cycle=0.5
0.2
0.1
0.05
0.02
0.01
1
Notes
0.1
single pulse
1.Duty cycle, D= t1 / t2
2.RthJC = 1.7
℃/W
3.TJ-TC = P*RthJC(t)
4.RthJC(t) = r(t)*RthJC
0.01
0.0001
0.001
0.01
0.1
1
10
100
T
1
, Square Wave Pulse Duration[sec]
REV 1.0
4
F-9-03
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