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PK664BA

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 114A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 2.4mΩ @ 20A, 10V Maximum power dissipation ( Ta=25°C): 59W Type: N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size379KB,4 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

PK664BA Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 114A Gate-source threshold voltage: 2.3V @ 250uA Drain-source on-resistance: 2.4mΩ @ 20A, 10V Maximum power dissipation ( Ta=25°C): 59W Type: N-channel

PK664BA Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C114A
Gate-source threshold voltage2.3V @ 250uA
Drain-source on-resistance2.4mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)59W
typeN channel
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PK664BA
PDFN 5x6P
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
2.4mΩ
I
D
114A
D
D
D
D
G
S
#1 S
S
S
G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
3
SYMBOL
V
DS
V
GS
LIMITS
30
±20
114
72
250
23
UNITS
V
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
Continuous Drain Current
(Steady-State)
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
I
AS
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
E
AS
P
D
I
D
18
32
26
48
115
59
23
2.4
1.5
A
Continuous Drain Current
(t
≦10s)
Avalanche Current
Avalanche Energy
Power Dissipation
Power Dissipation
(Steady-State)
mJ
W
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
T
j
, T
stg
P
D
Power Dissipation
(t
≦10s)
4.8
3
-55 to 150
W
Operating Junction & Storage Temperature Range
°C
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
1
2
2
2
SYMBOL
t
≦10s
Steady-State
Steady-State
R
JA
R
JA
R
JC
TYPICAL
MAXIMUM
26
51
2.1
UNITS
°C / W
Pulse width limited by maximum junction temperature.
2
The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
3
Package limitation current is 51A.
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