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P2804NVG

Description
Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 6A, 7A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 65mΩ @ 5A, 10V; 28mΩ @ 7A, 10V Maximum power dissipation (Ta=25°C): 2W Type: N-channel and P-channel N-channel 40V 7A P-channel-40V -6A MOS tube array
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size636KB,8 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

P2804NVG Overview

Drain-source voltage (Vdss): 40V Continuous drain current (Id) (at 25°C): 6A, 7A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 65mΩ @ 5A, 10V; 28mΩ @ 7A, 10V Maximum power dissipation (Ta=25°C): 2W Type: N-channel and P-channel N-channel 40V 7A P-channel-40V -6A MOS tube array

P2804NVG Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)40V
Continuous drain current (Id) at 25°C6A,7A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance65mΩ @ 5A,10V;28mΩ @ 7A,10V
Maximum power dissipation (Ta=25°C)2W
typeN channel and P channel
P2804NVG
N&P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
40V
-40V
R
DS(ON)
28mΩ @V
GS
= 10V
65mΩ @V
GS
= -10V
I
D
7A
-6A
Channel
N
P
SOP-8
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
T
A
= 25 °
C
Continuous Drain Current
T
A
= 70 °
C
Pulsed Drain Current
1
SYMBOL
V
DS
V
GS
CH.
N
P
N
P
N
P
N
P
N
P
N
P
N
P
LIMITS
40
-40
±20
±20
7
-6
6
-5
20
-20
2
UNITS
V
I
D
A
I
DM
T
A
= 25 °
C
Power Dissipation
T
A
= 70 °
C
Junction & Storage Temperature Range
Lead Temperature (
1
/
16
” from case for 10 sec.)
P
D
W
1.3
-55 to 150
275
°
C
T
J
, T
stg
T
L
REV 1.1
1
2014-4-14
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