P3203CMG
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
32mΩ @V
GS
= 4.5V
I
D
6A
SOT-23
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °
C
T
A
= 70 °
C
T
A
= 25 °
C
T
A
= 70 °
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
LIMITS
30
±12
6
5
30
1.25
0.8
-55 to 150
W
°
C
A
UNITS
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
3
1
2
SYMBOL
R
qJA
TYPICAL
MAXIMUM
100
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
Limited only by maximum temperature allowed.
Ver 1.0
1
2012/4/12
P3203CMG
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
Continuous Current
Forward Voltage
1
Reverse Recovery Time
Reverse Recovery Charge
1
2
LIMITS
MIN
30
0.45
0.7
1.2
±100
1
10
30
32
24
22
33
620
50
32
28
TYP
MAX
UNIT
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, I
D
= 250mA
V
DS
= V
GS
, I
D
= 250mA
V
DS
= 0V, V
GS
= ±16V
V
DS
= 16V, V
GS
= 0V
V
DS
= 10V, V
GS
= 0V , T
J
= 55 °
C
V
DS
= 5V, V
GS
= 4.5V
V
GS
= 2.5V, I
D
= 4A
V
GS
= 4.5V, I
D
= 5A
V
GS
= 10V, I
D
= 6A
V
DS
= 5V, I
D
= 5A
DYNAMIC
V
GS
= 0V, V
DS
= 15V, f = 1MHz
V
nA
mA
A
mΩ
S
69
62
8
1.5
3
4.5
4
37
pF
V
DS
= 0.5V
(BR)DSS
, V
GS
= 4.5V,
I
D
= 5A
nC
V
DS
= 15V
I
D
@
5A, V
GS
= 4.5V, R
GS
= 6Ω
nS
6
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICE ( T
J
= 25
°
C )
I
S
V
SD
t
rr
Q
rr
I
F
= 1.3A, V
GS
= 0V
I
F
= 6A, dl
F
/dt = 100 A/ms
10.5
2.1
1
1.3
A
V
nS
mC
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
Ver 1.0
2
2012/4/12
P3203CMG
N-Channel Enhancement Mode MOSFET
Ver 1.0
3
2012/4/12
P3203CMG
N-Channel Enhancement Mode MOSFET
Ver 1.0
4
2012/4/12
P3203CMG
N-Channel Enhancement Mode MOSFET
Ver 1.0
5
2012/4/12
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