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P9006EVG

Description
Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 4.5A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 90mΩ @ 4.5A, 10V Maximum power dissipation (Ta=25°C): 2.5W Type: P-channel P-channel -60V -4.5A
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size488KB,5 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

P9006EVG Overview

Drain-source voltage (Vdss): 60V Continuous drain current (Id) (at 25°C): 4.5A Gate-source threshold voltage: 2.5V @ 250uA Drain-source on-resistance: 90mΩ @ 4.5A, 10V Maximum power dissipation (Ta=25°C): 2.5W Type: P-channel P-channel -60V -4.5A

P9006EVG Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)60V
Continuous drain current (Id) at 25°C4.5A
Gate-source threshold voltage2.5V @ 250uA
Drain-source on-resistance90mΩ @ 4.5A,10V
Maximum power dissipation (Ta=25°C)2.5W
typeP channel
P9006EVG
P-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
-60V
R
DS(ON)
90mΩ @V
GS
= -10V
I
D
-4.5A
SOP- 08
ABSOLUTE MAXIMUM RATINGS (
A
= 25 °C Unless Otherwise Noted)
(T
)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
T
A
= 25 °C
T
A
= 70 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
LIMITS
-60
±20
-4.5
-3.5
-20
2.5
1.6
-55 to 150
W
°C
A
UNITS
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SS
C
Junction-to-Ambient
1
2
SYMBOL
S
O
R
θJA
TYPICAL
C
U
MAXIMUM
50
UNITS
°C / W
Pulse width limited by maximum junction temperature.
Duty cycle
1%.
Ver 1.0
1
2012/7/17
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