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PE616BA

Description
Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 36A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 7mΩ @ 12A, 10V Maximum power dissipation (Ta= 25°C): 16.7W Type: N-channel N-channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size285KB,4 Pages
ManufacturerNIKO-SEM
Websitehttp://www.niko-sem.com/
Download Datasheet Parametric View All

PE616BA Overview

Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 36A Gate-source threshold voltage: 3V @ 250uA Drain-source on-resistance: 7mΩ @ 12A, 10V Maximum power dissipation (Ta= 25°C): 16.7W Type: N-channel N-channel

PE616BA Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)30V
Continuous drain current (Id) at 25°C36A
Gate-source threshold voltage3V @ 250uA
Drain-source on-resistance7mΩ @ 12A,10V
Maximum power dissipation (Ta=25°C)16.7W
typeN channel
NIKO-SEM
N-Channel Enhancement Mode
Field Effect Transistor
PE616BA
PDFN 3x3P
Halogen-Free & Lead-Free
D
PRODUCT SUMMARY
V
(BR)DSS
30V
R
DS(ON)
7mΩ
I
D
36A
D
D D D
G
S
#1 S
S S G
G. GATE
D. DRAIN
S. SOURCE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
SYMBOL
V
DS
V
GS
LIMITS
30
±20
36
23
100
12
9.2
23
26.4
16.7
6.7
1.7
1
-55 to 150
UNITS
V
V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
Continuous Drain Current
Avalanche Current
Avalanche Energy
Power Dissipation
T
A
= 25 °C
T
A
= 70 °C
A
I
D
I
AS
L = 0.1mH
T
C
= 25 °C
T
C
= 100 °C
T
A
= 25 °C
T
A
= 70 °C
E
AS
P
D
mJ
W
Power Dissipation
P
D
T
j
, T
stg
W
°C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Ambient
Junction-to-Case
1
2
2
SYMBOL
R
JA
R
JC
TYPICAL
MAXIMUM
75
7
UNITS
°C / W
Pulse width limited by maximum junction temperature.
2
The value of R
θJA
is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air
environment with T
A
=25°C.
ELECTRICAL CHARACTERISTICS (T
J
= 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
REV 0.9
1
V
(BR)DSS
V
GS(th)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
30
1.35
1.8
3
D-22-3
V
LIMITS
UNIT
MIN TYP MAX
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