NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
D
P2003EVG
SOP-8
Halogen-Free & Lead-Free
PRODUCT SUMMARY
V
(BR)DSS
-30
R
DS(ON)
20mΩ
I
D
-9A
4
:GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
G
S
ABSOLUTE MAXIMUM RATINGS (T
C
= 25
°C
Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Avalanche Current
Avalanche Energy
Power Dissipation
L = 0.1mH
T
C
= 25 °C
T
C
= 70 °C
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
100% UIS tested
LIMITS
-30
±25
-9
-7
-50
-26
34
2.5
1.6
-55 to 150
°C
UNITS
°C / W
°C / W
mJ
W
A
UNITS
V
V
SYMBOL
V
DS
V
GS
T
C
= 25 °C
T
C
= 70 °C
I
D
I
DM
I
AS
E
AS
P
D
T
j
, T
stg
SYMBOL
R
θJ
c
R
θJA
TYPICAL
MAXIMUM
25
50
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
C
= 25
°C,
Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-State
Resistance
1
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
V
GS
= 0V, I
D
= -250μA
V
DS
= V
GS
, I
D
= -250μA
V
DS
= 0V, V
GS
= ±25V
V
DS
= -24V, V
GS
= 0V
V
DS
= -20V, V
GS
= 0V, T
J
= 125 °C
V
DS
= -5V, V
GS
= -10V
V
GS
= -4.5V, I
D
= -7A
V
GS
= -10V, I
D
= -9A
9
25
15
35
20
-30
-1
-1.5
-3
±100
-1
-10
nA
μA
A
mΩ
V
LIMITS
UNIT
MIN TYP MAX
REV 0.9
Feb-05-2009
1
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2003EVG
SOP-8
Halogen-Free & Lead-Free
24
S
Forward Transconductance
1
g
fs
V
DS
= -10V, I
D
= -9A
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
2
Fall Time
2
C
iss
C
oss
C
rss
Rg
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
DS
= -15V, R
L
= 1Ω
I
D
≅
-1A, V
GS
= -10V, R
GS
= 6Ω
V
DS
= 0.5V
(BR)DSS
, V
GS
= -10V,
I
D
= -9A
V
GS
= 15mV, V
DS
= 0V, f = 1MHz
V
GS
= 0V, V
DS
= -15V, f = 1MHz
1610
410
200
3.7
31.4
4.5
8.2
5.7
10
18
5
nS
nC
Ω
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
C
= 25
°C)
Continuous Current
Forward Voltage
1
1
2
I
S
V
SD
I
F
= -1A, V
GS
= 0V
-2.1
-1.2
A
V
Pulse test : Pulse Width
≤
300
μsec,
Duty Cycle
≤
2％.
Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “P2003EVG”, DATE CODE or LOT #
REV 0.9
Feb-05-2009
2
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2003EVG
SOP-8
Halogen-Free & Lead-Free
Body Diode Forward Voltage Variation with Source Current and Temperature
100
10
-Is - Reverse Drain Current(A)
V
GS
= 0V
1
T
A
= 125° C
0.1
25° C
0.01
-55° C
0.001
0.0001
0
0.2
0.4
0.6
0.8
-V
SD
- Body Diode Forward Voltage(V)
1.0
1.2
REV 0.9
Feb-05-2009
3
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2003EVG
SOP-8
Halogen-Free & Lead-Free
REV 0.9
Feb-05-2009
4
NIKO-SEM
P-Channel Logic Level Enhancement
Mode Field Effect Transistor
P2003EVG
SOP-8
Halogen-Free & Lead-Free
REV 0.9
Feb-05-2009
5
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