P6006BD
N-Channel Enhancement Mode MOSFET
PRODUCT SUMMARY
V
(BR)DSS
60V
R
DS(ON)
60mΩ @V
GS
= 10V
I
D
21A
TO-252
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 ° Unless Otherwise Noted)
C
PARAMETERS/TEST CONDITIONS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Power Dissipation
T
C
= 25 °
C
T
C
= 100 °
C
T
C
= 25 °
C
T
C
= 100 °
C
SYMBOL
V
DS
V
GS
I
D
I
DM
P
D
T
J
, T
STG
LIMITS
60
±20
21
17
85
50
32
-55 to 150
W
°
C
A
UNITS
V
Operating Junction & Storage Temperature Range
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
Junction-to-Case
Junction-to-Ambient
1
SYMBOL
R
qJC
R
qJA
TYPICAL
MAXIMUM
2.5
75
UNITS
° /W
C
Pulse width limited by maximum junction temperature.
Ver 1.0
1
2012/4/16
P6006BD
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS (T
J
= 25 ° Unless Otherwise Noted)
C,
PARAMETER
SYMBOL
TEST CONDITIONS
STATIC
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-State
Resistance
1
Forward Transconductance
1
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
2
Gate-Source Charge
2
Gate-Drain Charge
2
Turn-On Delay Time
2
Rise Time
2
Turn-Off Delay Time
Fall Time
2
Continuous Current
Forward Voltage
1
2
1
2
LIMITS
MIN
60
1.0
1.5
2.5
±250
1
10
21
60
48
12
584
80
60
TYP
MAX
UNIT
V
(BR)DSS
V
GS(th)
I
GSS
I
DSS
I
D(ON)
R
DS(ON)
g
fs
C
iss
C
oss
C
rss
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
V
GS
= 0V, I
D
= 250mA
V
DS
= V
GS
, I
D
= 250mA
V
DS
= 0V, V
GS
= ±20V
V
DS
= 48V, V
GS
= 0V
V
DS
= 40V, V
GS
= 0V , T
J
= 55 °
C
V
DS
= 5V, V
GS
= 10V
V
GS
= 5V, I
D
= 8A
V
GS
= 10V, I
D
= 12A
V
DS
= 10V, I
D
= 10A
DYNAMIC
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
nA
mA
A
mΩ
S
79
44
11.5
2.1
2.5
10
7.3
17.5
pF
V
DS
= 0.5V
(BR)DSS
, V
GS
= 10V,
I
D
= 10A
nC
V
DD
= 30V,
I
D
@
1A, V
GS
= 10V, R
GEN
= 6Ω
nS
5.5
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (T
J
= 25 °
C)
I
S
V
SD
I
F
= I
S
, V
GS
= 0V
12
1.2
A
V
Pulse test : Pulse Width
300
msec,
Duty Cycle
2％.
Independent of operating temperature.
Ver 1.0
2
2012/4/16
P6006BD
N-Channel Enhancement Mode MOSFET
Ver 1.0
3
2012/4/16
P6006BD
N-Channel Enhancement Mode MOSFET
Ver 1.0
4
2012/4/16
P6006BD
N-Channel Enhancement Mode MOSFET
Ver 1.0
5
2012/4/16
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