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Datasheet> All Categories > Discrete semiconductor> MOS (field effect tube)> PJQ5494_R2_00001
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PJQ5494_R2_00001

Description
Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 40A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 35mΩ @ 20A, 10V Maximum power dissipation (Ta=25°C): 131W(Tc) Type: N channel
CategoryDiscrete semiconductor    MOS (field effect tube)   
File Size593KB，6 Pages
ManufacturerPANJIT
Websitehttp://www.panjit.com.tw/

PANJIT is a global IDM that offers a broad product portfolio including MOSFETs, Schottky diodes, SiC devices, bipolar junction transistors and bridges. The company aims to meet the needs of customers in various applications such as automotive, power, industrial, computing, consumer and communications. Their vision is to power the world with reliable quality, energy-efficient and efficient products, bringing a greener and smarter future to people. The company's core values ​​include innovation, responsibility, customer-centricity, learning and growth, mutual trust and collaboration.

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PJQ5494_R2_00001 Overview

Drain-source voltage (Vdss): 150V Continuous drain current (Id) (at 25°C): 40A (Tc) Gate-source threshold voltage: 4V @ 250uA Drain-source on-resistance: 35mΩ @ 20A, 10V Maximum power dissipation (Ta=25°C): 131W(Tc) Type: N channel

PJQ5494_R2_00001 Parametric

Parameter NameAttribute value
Drain-source voltage (Vdss)150V
Continuous drain current (Id) at 25°C40A(Tc)
Gate-source threshold voltage4V @ 250uA
Drain-source on-resistance35mΩ @ 20A,10V
Maximum power dissipation (Ta=25°C)131W(Tc)
typeN channel

PJQ5494_R2_00001 Preview

Download Datasheet
PPJQ5494
150V N-Channel Enhancement Mode MOSFET
Voltage
Features
150 V
Current
40A
DFN5060-8L
R
DS(ON)
, V
GS
@10V, I
D
@20A<35mΩ
High switching speed
Improved dv/dt capability
Low reverse transfer capacitance
Lead free in compliance with EU RoHS 2.0
Green molding compound as per IEC 61249 standard
Mechanical Data
Case: DFN5060-8L Package
Terminals: Solderable per MIL-STD-750, Method 2026
Approx. Weight: 0.0028 ounces, 0.08 grams
o
Maximum Ratings and Thermal Characteristics
(T
A
=25 C unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Continuous Drain Current
Power Dissipation
Power Dissipation
(Note 1)
SYMBOL
V
DS
V
GS
LIMIT
UNITS
V
150
+20
40
25
120
131
52
5.0
4.0
2.0
1.3
31.5
-55~150
0.95
62.5
o
T
C
=25
o
C
T
C
=100
o
C
T
C
=25 C
T
C
=25
o
C
T
C
=100
o
C
T
A
=25
o
C
T
A
=70
o
C
T
A
=25
o
C
T
A
=70
o
C
o
I
D
I
DM
P
D
I
D
P
D
E
AS
T
J
,T
STG
R
θJC
R
θJA
A
W
A
W
mJ
o
Single Pulse Avalanche Energy
(Note 6)
Operating Junction and Storage Temperature Range
Typical Thermal Resistance
(Note 4,5)
C
Junction to Case
Junction to Ambient
C/W
Limited only By Maximum Junction Temperature
March 27,2018-REV.01
Page 1

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