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DTB543XETL

Description
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SC-75A, EMT3, 3 PIN
CategoryThe transistor   
File Size48KB,2 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
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DTB543XETL Overview

Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, SC-75A, EMT3, 3 PIN

DTB543XETL Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
Parts packaging codeSC-75A
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Other featuresBUILT IN BIAS RESISTOR RATIO 2.1
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)140
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)0.15 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN SILVER COPPER
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)260 MHz
Base Number Matches1
DTB543XE / DTB543XM
Transistors
-500mA / -12V Low V
CE
(sat) Digital transistors
(with built-in resistors)
DTB543XE / DTB543XM
Applications
Inverter, Interface, Driver
Feature
1) V
CE
(sat) is lower than conventional products.
2) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
4) Only the on / off conditions need to be set for
operation, making the device design easy.
Structure
PNP epitaxial plannar silicon transistor
(Resistor built-in type)
External dimensions
(Unit : mm)
DTB543XE
1.6
0.3
(3)
0.8
1.6
0.7
0.55
0.2
0.5 0.5
1.0
EMT3
JEITA No. (SC-75A)
JEDEC No. <SOT-416>
0.2
0.15
0.1Min.
(2)
(1)
(1) GND
(2) IN
(3) OUT
Each lead has same dimensions
Abbreviated symbol : X33
DTB543XM
0.2
0.8
1.2
1.2
0.32
(3)
0.2
0.22
(1)(2)
0.4 0.4
0.8
0.13
0.5
(1) IN
(2) GND
(3) OUT
VMT3
Each lead has same dimensions
Abbreviated symbol : X33
Absolute maximum ratings
(Ta=25°C)
Parameter
Supply voltage
Input voltage
Collector current
Power dissipation
Junction temperature
Storage temperature
∗1
∗2
Packaging specifications
Package
EMT3
Taping
VMT3
Taping
Symbol
V
CC
V
IN
I
C (max)
P
D
Tj
Tstg
Limits
DTB543XE DTB543XM
−12
−12
to
+7
−500
150
150
−55
to
+150
Unit
V
V
mA
mW
C
C
Part No.
DTB543XE
DTB543XM
Packaging type
Code
Basic ordering
unit (pieces)
TL
3000
T2L
8000
∗1
Characteristics of built-in transistor.
∗2
Each terminal mounted on a recommended land.
Electrical characteristics
(Ta=25°C)
Parameter
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
Characteristics of built-in transistor.
Equivalent circuit
Typ.
−70
260
4.7
2.1
Max.
−0.3
−300
−1.4
−500
6.11
2.6
Unit
V
mV
mA
nA
MHz
kΩ
Conditions
V
CC
=
−5V,
I
O
=
−100µA
V
O
=
−0.3V,
I
O
=
−20mA
I
O
/I
I
=
−100mA
/
−5mA
V
I
=
−5V
V
CC
=
−12V,
V
I
=0V
V
O
=
−2V,
I
O
=
−100mA
V
CE
=
−10V,
I
E
=5mA, f=100MHz
IN
GND(+)
OUT
IN
R
2
GND(+)
R
1
OUT
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
f
T
R
1
R
2
/R
1
Min.
−2.5
140
3.29
1.7
R
1
=4.7kΩ / R
2
=10kΩ
1/1

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