CMPTA56 datasheet, PDF - EEWORLD Datasheet

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CMPTA56: DescriptionSURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS; CategoryDiscrete semiconductor The transistor; File Size97KB，2 Pages; ManufacturerCentral Semiconductor

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CMPTA56 Overview

SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS

CMPTA56 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	50 MHz

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CMPTA06 NPN

CMPTA56 PNP

SURFACE MOUNT

COMPLEMENTARY

SILICON TRANSISTORS

Central

Semiconductor Corp.

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMPTA06,

CMPTA56 types are complementary silicon

transistors manufactured by the epitaxial planar

process, epoxy molded in a surface mount

package, designed for small signal general

purpose and switching applications.

MARKING CODES: CMPTA06 : C1G

CMPTA56 : C2G

SOT-23 CASE

MAXIMUM RATINGS:

(TA=25°C)

SYMBOL

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Base Current

Peak Base Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

VCBO

VCEO

VEBO

IBM

TJ,Tstg

4.0

500

100

200

350

-65 to +150

357

UNITS

°C

°C/W

ELECTRICAL CHARACTERISTICS

(TA=25°C unless otherwise noted)

SYMBOL

ICBO

ICEO

BVCEO

BVEBO

VCE(SAT)

VBE(ON)

hFE

TEST CONDITIONS

VCB=80V

VCB=80V, TA=150°C

VCE=60V

IC=1.0mA

IE=100µA

IC=100mA, IB=10mA

VCE=1.0V, IC=100mA

VCE=1.0V,

VCE=2.0V,

IC=10mA

IC=100mA

IC=10mA, f=100MHz (CMPTA06)

MIN

MAX

100

4.0

0.25

1.20

100

UNITS

µA

MHz

VCE=1.0V, IC=100mA, f=100MHz(CMPTA56)

R5 (13-November 2002)

CMPTA56 Related Products

	CMPTA56	CMPTA06
Description	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS	SURFACE MOUNT COMPLEMENTARY SILICON TRANSISTORS
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	incompatible	incompatible
Maker	Central Semiconductor	Central Semiconductor
package instruction	PLASTIC PACKAGE-3	PLASTIC PACKAGE-3
Contacts	3	3
Reach Compliance Code	_compli	_compli
ECCN code	EAR99	EAR99
Maximum collector current (IC)	0.5 A	0.5 A
Collector-emitter maximum voltage	80 V	80 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	NPN
Maximum power dissipation(Abs)	0.35 W	0.35 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	50 MHz	100 MHz

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