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1N6315US

Description
4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
Categorysemiconductor    Discrete semiconductor   
File Size109KB,2 Pages
ManufacturerCDI-DIODE
Websitehttp://www.cdi-diodes.com
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1N6315US Overview

4.3 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE

• AVAILABLE IN
JAN, JANTX, JANTXV
AND
JANS
PER MIL-PRF-19500/533
• 500 mW ZENER DIODES
• NON CAVITY CONSTRUCTION
• METALLURGICALLY BONDED
1N6309US
THRU
1N6320US
MAXIMUM RATINGS
Operating Temperature: -65°C to +175°C
Storage Temperature: -65°C to +175°C
Power Dissapation: 500 mW@TEC=+125ºC
Power Derating: 10 mW/°C above TEC=+125ºC
Forward Voltage: 1.4V dc @ IF=1A dc (pulsed)
ELECTRICAL CHARACTERISTICS
@ 25°C, unless otherwise specified
VZ2
NOM.
±5% @
IZ2
VOLTS
1N6309US
1N6310US
1N6311US
1N6312US
1N6313US
1N6314US
1N6315US
1N6316US
1N6317US
1N6318US
1N6319US
1N6320US
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
VZ1
MIN.
@IZ1
250µ A
VOLTS
1.1
1.2
1.3
1.5
1.8
2.0
2.4
2.8
3.3
4.3
5.2
6.0
IZ2
TEST
CURRENT
mA
20
20
20
20
20
20
20
20
20
20
20
20
ZZ
@
IZ2
OHMS
30
30
29
24
22
20
18
16
14
8.0
3.0
3.0
ZZK
@
250µ A
OHMS
1200
1300
1400
1400
1400
1700
1400
1500
1300
1200
800
400
IZM
VZ (reg)
v
VZ
(1)
mA
177
157
141
128
117
108
99
90
83
76
68
63
VOLTS
1.5
1.5
1.5
1.6
1.6
1.6
0.9
0.5
0.4
0.4
0.3
0.35
AMPS
2.5
2.2
2.0
1.8
1.65
1.5
1.4
1.27
1.17
1.10
0.97
1.23
VOLTS
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.0
2.5
3.5
4.0
IZSM
SURGE
VR
IR1
@
25ºC
µ
A
100
60
30
5.0
3.0
2.0
2.0
5.0
5.0
5.0
5.0
2.0
IR2
ND
@ @250
µA
TA=
1-3 kHz
150ºC
µ
A
200
150
100
20
12
12
12
12
12
10
10
50
µ
V/ Hz
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
2.0
5.0
5.0
DIM
D
F
G
S
MILLIMETERS
MIN
MAX
1.78
2.16
0.48
0.71
4.19
4.95
0.08MIN.
INCHES
MIN MAX
0.070 0.085
0.019 0.028
0.165 0.195
0.003MIN.
TYPE
FIGURE 1
DESIGN DATA
CASE:
D-5D, Hermetically sealed glass
case, per MIL-PRF- 19500/533
LEAD FINISH:
Tin / Lead
THERMAL RESISTANCE: (R
OJEC):
50 ˚C/W maximum
NOTE 1:
v
VZ = VZ @ 20 mAdc minus VZ @ 2mAdc
THERMAL IMPEDANCE: (Z
OJX): 15
˚C/W maximum
POLARITY:
Diode to be operated with
the banded (cathode) end positive.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) of this device is approximately
+ 4PPM / °C. The COE of the Mounting
Surface System should be selected to
provide a suitable match with this
device.
22 COREY STREET, MELROSE, MASSACHUSETTS 02176
PHONE (781) 665-1071
FAX (781) 665-7379
WEBSITE: http://www.cdi-diodes.com
E-mail: mail@cdi-diodes.com
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